We detect correlations in qubit-energy fluctuations of non-neighboring qubits defined in
isotopically purified Si/Si-Ge quantum dots. At low frequencies (where the noise is …

The electrical characterisation of classical and quantum devices is a critical step in the
development cycle of heterogeneous material stacks for semiconductor spin qubits. In the …

We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition
on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality …

Abstract Hole spins in Ge/SiGe heterostructures have emerged as an interesting qubit
platform with favourable properties such as fast electrical control and noise-resilient …

Progress in fabrication of semiconductor and superconductor qubits has greatly diminished
the number of decohering defects, thus decreasing the devastating low-frequency 1/f noise …

Several domains of society will be disrupted once millions of high-quality qubits can be
brought together to perform fault-tolerant quantum computing (FTQC). All quantum …

Semiconductors are key to our modern society, enabling a myriad of fields, including
electronics, photovoltaics, and photonics. The performance of semiconductor devices can be …

Addressing and mitigating decoherence sources plays an essential role in the development
of a scalable quantum computing system, which requires low gate errors to be consistently …

Hole-based spin qubits in strained planar germanium quantum wells have received
considerable attention due to their favorable properties and remarkable experimental …

Electron spins in silicon quantum dots are excellent qubits due to their long coherence
times, scalability, and compatibility with advanced semiconductor technology. Although high …