III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …

Ferroelectrics have great potential in the field of nonvolatile memory due to programmable
polarization states by external electric field in nonvolatile manner. However, complementary …

We report on the demonstration of ferroelectricity in ScxAl1-xN grown by molecular beam
epitaxy on GaN templates. Distinct polarization switching is unambiguously observed for …

We report on the thickness scaling behavior of ferroelectric Sc 0.3 Al 0.7 N (ScAlN) films
grown on Mo substrates by molecular beam epitaxy. Switchable ferroelectricity is confirmed …

We report on the ferroelectric properties of single-phase wurtzite ScGaN grown on GaN by
plasma-assisted molecular beam epitaxy. Distinct ferroelectric switching behavior was …

We report on the effect of dislocation density on the ferroelectric properties of single-
crystalline ScAlN thin films grown by molecular beam epitaxy. Wurtzite phase and atomically …

Ferroelectricity enables key modern technologies from non-volatile memory to precision
ultrasound. The first known wurtzite ferroelectric Al1− xScxN has recently attracted attention …

Wurtzite-type ferroelectrics have drawn increasing attention due to the promise of better
performance and integration than traditional oxide ferroelectrics with semiconductors such …

This article presents a bulk acoustic wave (BAW) resonator with complementary switchable
operation in the first and second thickness extensional modes (TE 1 and TE 2) at 7.04 and …

The effect of pure mechanical strain on ferroelectricity was investigated for (001)-one-axis-
oriented (Al0. 8Sc0. 2) N films deposited on (111) Pt-coated substrates with different thermal …