Vertical transistors based on 2D materials: Status and prospects

F Giannazzo, G Greco, F Roccaforte, SS Sonde - Crystals, 2018 - mdpi.com
Two-dimensional (2D) materials, such as graphene (Gr), transition metal dichalcogenides
(TMDs) and hexagonal boron nitride (h-BN), offer interesting opportunities for the …

Heterogeneous Integration of Wide Bandgap Semiconductors and 2D Materials: Processes, Applications, and Perspectives

SH Choi, Y Kim, I Jeon, H Kim - Advanced Materials, 2024 - Wiley Online Library
Wide‐bandgap semiconductors (WBGs) are crucial building blocks of many modern
electronic devices. However, there is significant room for improving the crystal quality …

Conductive atomic force microscopy of semiconducting transition metal dichalcogenides and heterostructures

F Giannazzo, E Schilirò, G Greco, F Roccaforte - Nanomaterials, 2020 - mdpi.com
Semiconducting transition metal dichalcogenides (TMDs) are promising materials for future
electronic and optoelectronic applications. However, their electronic properties are strongly …

Substrate-driven atomic layer deposition of high-κ dielectrics on 2d materials

E Schilirò, R Lo Nigro, F Roccaforte, F Giannazzo - Applied Sciences, 2021 - mdpi.com
Atomic layer deposition (ALD) of high-κ dielectrics on two-dimensional (2D) materials
(including graphene and transition metal dichalcogenides) still represents a challenge due …

Defects guided wrinkling in graphene on copper substrate

Z Pang, B Deng, Z Liu, H Peng, Y Wei - Carbon, 2019 - Elsevier
Pristine graphene depositing on metallic substrates often wrinkles when the film-substrate
system undergoes a temperature drop from the chemical vapor deposition (CVD) chamber …

Recent advances in seeded and seed-layer-free atomic layer deposition of high-K dielectrics on graphene for electronics

E Schilirò, R Lo Nigro, F Roccaforte, F Giannazzo - C, 2019 - mdpi.com
Graphene (Gr) with its distinctive features is the most studied two-dimensional (2D) material
for the new generation of high frequency and optoelectronic devices. In this context, the …

High-frequency graphene base hot-electron transistor

BW Liang, WH Chang, HY Lin, PC Chen, YT Zhang… - ACS …, 2021 - ACS Publications
The integration of graphene and other two-dimensional (2D) materials with existing silicon
semiconductor technology is highly desirable. This is due to the diverse advantages and …

Graphene as a Schottky barrier contact to AlGaN/GaN heterostructures

M Dub, P Sai, A Przewłoka, A Krajewska, M Sakowicz… - Materials, 2020 - mdpi.com
Electrical and noise properties of graphene contacts to AlGaN/GaN heterostructures were
studied experimentally. It was found that graphene on AlGaN forms a high-quality Schottky …

Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition

F Giannazzo, R Dagher, E Schilirò, SE Panasci… - …, 2020 - iopscience.iop.org
The integration of graphene (Gr) with nitride semiconductors is highly interesting for
applications in high-power/high-frequency electronics and optoelectronics. In this work, we …

Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition

YF He, ML Li, SJ Liu, HY Wei, HY Ye, YM Song… - Acta Metallurgica Sinica …, 2019 - Springer
In this work, the GaN thin films were directly deposited on multilayer graphene (MLG) by
plasma-enhanced atomic layer deposition. The deposition was carried out at a low …