Vertical transistors based on 2D materials: Status and prospects
Two-dimensional (2D) materials, such as graphene (Gr), transition metal dichalcogenides
(TMDs) and hexagonal boron nitride (h-BN), offer interesting opportunities for the …
(TMDs) and hexagonal boron nitride (h-BN), offer interesting opportunities for the …
Heterogeneous Integration of Wide Bandgap Semiconductors and 2D Materials: Processes, Applications, and Perspectives
Wide‐bandgap semiconductors (WBGs) are crucial building blocks of many modern
electronic devices. However, there is significant room for improving the crystal quality …
electronic devices. However, there is significant room for improving the crystal quality …
Conductive atomic force microscopy of semiconducting transition metal dichalcogenides and heterostructures
Semiconducting transition metal dichalcogenides (TMDs) are promising materials for future
electronic and optoelectronic applications. However, their electronic properties are strongly …
electronic and optoelectronic applications. However, their electronic properties are strongly …
Substrate-driven atomic layer deposition of high-κ dielectrics on 2d materials
Atomic layer deposition (ALD) of high-κ dielectrics on two-dimensional (2D) materials
(including graphene and transition metal dichalcogenides) still represents a challenge due …
(including graphene and transition metal dichalcogenides) still represents a challenge due …
Defects guided wrinkling in graphene on copper substrate
Pristine graphene depositing on metallic substrates often wrinkles when the film-substrate
system undergoes a temperature drop from the chemical vapor deposition (CVD) chamber …
system undergoes a temperature drop from the chemical vapor deposition (CVD) chamber …
Recent advances in seeded and seed-layer-free atomic layer deposition of high-K dielectrics on graphene for electronics
Graphene (Gr) with its distinctive features is the most studied two-dimensional (2D) material
for the new generation of high frequency and optoelectronic devices. In this context, the …
for the new generation of high frequency and optoelectronic devices. In this context, the …
High-frequency graphene base hot-electron transistor
The integration of graphene and other two-dimensional (2D) materials with existing silicon
semiconductor technology is highly desirable. This is due to the diverse advantages and …
semiconductor technology is highly desirable. This is due to the diverse advantages and …
Graphene as a Schottky barrier contact to AlGaN/GaN heterostructures
Electrical and noise properties of graphene contacts to AlGaN/GaN heterostructures were
studied experimentally. It was found that graphene on AlGaN forms a high-quality Schottky …
studied experimentally. It was found that graphene on AlGaN forms a high-quality Schottky …
Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition
The integration of graphene (Gr) with nitride semiconductors is highly interesting for
applications in high-power/high-frequency electronics and optoelectronics. In this work, we …
applications in high-power/high-frequency electronics and optoelectronics. In this work, we …
Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
YF He, ML Li, SJ Liu, HY Wei, HY Ye, YM Song… - Acta Metallurgica Sinica …, 2019 - Springer
In this work, the GaN thin films were directly deposited on multilayer graphene (MLG) by
plasma-enhanced atomic layer deposition. The deposition was carried out at a low …
plasma-enhanced atomic layer deposition. The deposition was carried out at a low …