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GaN integration technology, an ideal candidate for high-temperature applications: A review
In many leading industrial applications such as aerospace, military, automotive, and deep-
well drilling, extreme temperature environment is the fundamental hindrance to the use of …
well drilling, extreme temperature environment is the fundamental hindrance to the use of …
GaN-based power high-electron-mobility transistors on Si substrates: From materials to devices
N Wu, Z ** small polaron tunneling electrical conduction in oxygen-deficient β-Ga2O3 thin film on p-Si (100)
Monoclinic β-Ga2O3 thin films were grown on heavily doped p-type Si substrate by pulsed
laser deposition (PLD) at growth temperature 700° C and oxygen partial pressure 1× 10–2 …
laser deposition (PLD) at growth temperature 700° C and oxygen partial pressure 1× 10–2 …
Thermal and Electrical Stability Assessment of AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors (MOS-HEMTs) With HfO2 Gate Dielectric
AlGaN/GaN high-electron mobility transistors (HEMTs) and metal-oxide-semiconductor
(MOS)-HEMTs using HfO 2 as a gate dielectric have been analyzed at room temperature …
(MOS)-HEMTs using HfO 2 as a gate dielectric have been analyzed at room temperature …
A study of electrical characteristics of Gd2O3/GaN and Gd2O3/AlGaN/GaN MOS Heterostructures
In this paper, we present the electrical properties of hexagonal Gd 2 O 3 grown epitaxially on
GaN/Si (111) and AlGaN/GaN/Si (111) virtual substrates. GaN and AlGaN/GaN …
GaN/Si (111) and AlGaN/GaN/Si (111) virtual substrates. GaN and AlGaN/GaN …
AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Ga2O3 Gate Dielectric Layer Grown by Vapor Cooling Condensation System
HY Lee, TW Chang, CT Lee - Journal of Electronic Materials, 2021 - Springer
In this study, intrinsic Ga 2 O 3 (i-Ga 2 O 3) film was deposited at about 80 K using a vapor
cooling condensation system. Its bandgap energy was 5.0 eV. Low oxygen vacancy and …
cooling condensation system. Its bandgap energy was 5.0 eV. Low oxygen vacancy and …