Flexoelectricity in solids: Progress, challenges, and perspectives

B Wang, Y Gu, S Zhang, LQ Chen - Progress in Materials Science, 2019 - Elsevier
The flexoelectricity describes the contribution of the linear couplings between the electric
polarization and strain gradient and between polarization gradient and strain to the …

Raman scattering spectra of ceramics, films, and superlattices of ferroelectric perovskites: A review

YI Yuzyuk - Physics of the Solid State, 2012 - Springer
Raman investigations of the crystal lattice dynamics in classical ferroelectric perovskites
SrTiO 3, PbTiO 3, and BaTiO 3 have been analyzed. The specific features revealed in the …

Average and local atomic-scale structure in BaZrxTi1− xO3 (x= 0.10, 0.20, 0.40) ceramics by high-energy x-ray diffraction and Raman spectroscopy

V Buscaglia, S Tripathi, V Petkov… - Journal of Physics …, 2014 - iopscience.iop.org
High-resolution x-ray diffraction (XRD), Raman spectroscopy and total scattering XRD
coupled to atomic pair distribution function (PDF) analysis studies of the atomic-scale …

Plasma-Induced Vacancy Defects in Oxygen Evolution Cocatalysts on Ta3N5 Photoanodes Promoting Solar Water Splitting

L Wang, B Zhang, Q Rui - Acs Catalysis, 2018 - ACS Publications
Surface recombination is a critical issue for tantalum nitride (Ta3N5)-based photoanodes in
solar water splitting application. The efficient cocatalysts (Ni-, Fe-, and Co-based) have been …

Raman study of oxygen reduced and re-oxidized strontium titanate

DA Tenne, IE Gonenli, A Soukiassian, DG Schlom… - Physical Review B …, 2007 - APS
We report Raman study of oxygen reduced single crystal strontium titanate. Oxygen
reduction leads to the appearance of the forbidden first-order Raman peaks, as well as …

Enhanced flexoelectricity through residual ferroelectricity in barium strontium titanate

LM Garten, S Trolier-McKinstry - Journal of Applied Physics, 2015 - pubs.aip.org
Residual ferroelectricity is observed in barium strontium titanate ceramics over 30 C above
the global phase transition temperature, in the same temperature range in which …

Influence of oxygen pressure during deposition on the microwave dielectric tunability of Ba0. 5Sr0. 5TiO3 thin films in PLD process

TSA Raman, B Arun, C Shivakumar, A Joseph… - Applied Surface …, 2024 - Elsevier
Abstract Thin films of Ba 0.5 Sr 0.5 TiO 3 (BSTO) were pulsed laser deposited on platinized
silicon substrates with varying oxygen pressure from 5× 10− 1 mbar to 5× 10− 6 mbar. A …

Oxygen related recombination defects in Ta3N5 water splitting photoanode

G Fu, S Yan, T Yu, Z Zou - Applied Physics Letters, 2015 - pubs.aip.org
A key route to improving the performance of Ta 3 N 5 photoelectrochemical film devices in
solar driving water splitting to hydrogen is to understand the nature of the serious …

Origin of ferroelectricity in cubic phase of Hf substituted BaTiO3

A Sati, P Pokhriyal, A Kumar, S Anwar… - Journal of Physics …, 2021 - iopscience.iop.org
The origin of ferroelectricity in the cubic phase of BaTi 1− x Hf x O 3 has been investigated.
The presence of well-defined ferroelectric polarization versus electric field (PE) hysteresis …

Residual ferroelectricity in barium strontium titanate thin film tunable dielectrics

LM Garten, P Lam, D Harris, JP Maria… - Journal of applied …, 2014 - pubs.aip.org
Loss reduction is critical to develop Ba 1− x Sr x TiO 3 thin film tunable microwave dielectric
components and dielectric energy storage devices. The presence of ferroelectricity, and …