Compact modeling of MOSFET wearout mechanisms for circuit-reliability simulation
X Li, J Qin, JB Bernstein - IEEE Transactions on device and …, 2008 - ieeexplore.ieee.org
The integration density of state-of-the-art electronic systems is limited by the reliability of the
manufactured integrated circuits at a desired circuit density. Design rules, operating …
manufactured integrated circuits at a desired circuit density. Design rules, operating …
Cross-layer modeling and simulation of circuit reliability
Integrated circuit design in the late CMOS era is challenged by the ever-increasing
variability and reliability issues. The situation is further compounded by real-time …
variability and reliability issues. The situation is further compounded by real-time …
Surrogate-model-based analysis of analog circuits—Part I: Variability analysis
In this paper, an integrated variability and reliability analysis method based on surrogate
models is introduced. The surrogate models here are response surfaces that describe a …
models is introduced. The surrogate models here are response surfaces that describe a …
Characterization of the evolution of IC emissions after accelerated aging
A Boyer, AC Ndoye, SB Dhia, L Guillot… - IEEE Transactions on …, 2009 - ieeexplore.ieee.org
With the evolving technological development of integrated circuits, ensuring electromagnetic
compatibility (EMC) is becoming a serious challenge for electronic circuit and system …
compatibility (EMC) is becoming a serious challenge for electronic circuit and system …
Reliability study of LED driver–A case study of black box testing
S Lan, CM Tan, K Wu - Microelectronics Reliability, 2012 - Elsevier
A method to evaluate the reliability of the Integrated Circuit without knowing the details of the
internal circuit is developed. This method is called Pseudo Black Box testing because the …
internal circuit is developed. This method is called Pseudo Black Box testing because the …
SRAM circuit-failure modeling and reliability simulation with SPICE
X Li, J Qin, B Huang, X Zhang… - IEEE Transactions on …, 2006 - ieeexplore.ieee.org
Based on some new accelerated lifetime models and failure equivalent circuit modeling
techniques for the common semiconductor wear out mechanisms, simulation program with …
techniques for the common semiconductor wear out mechanisms, simulation program with …
Efficient reliability simulation of analog ICs including variability and time-varying stress
E Maricau, G Gielen - 2009 Design, Automation & Test in …, 2009 - ieeexplore.ieee.org
Aggressive scaling to nanometer CMOS technologies causes both analog and digital circuit
parameters to degrade over time due to die-level stress effects (ie NBTI, HCI, TDDB, etc). In …
parameters to degrade over time due to die-level stress effects (ie NBTI, HCI, TDDB, etc). In …
Machine Learning-Based Soft-Error-Rate Evaluation for Large-Scale Integrated Circuits
Transient pulses generated by high-energy particles can cause soft errors in circuits,
resulting in spacecraft malfunctions and posing serious threats to the normal operation of …
resulting in spacecraft malfunctions and posing serious threats to the normal operation of …
Towards a chip level reliability simulator for copper/low-k backend processes
M Bashir, L Milor - 2010 Design, Automation & Test in Europe …, 2010 - ieeexplore.ieee.org
A framework is proposed to analyze circuit layout geometries to predict chip lifetime due to
low-k time-dependent dielectric breakdown (TDDB). The methodology uses as inputs data …
low-k time-dependent dielectric breakdown (TDDB). The methodology uses as inputs data …
Aging Reliability Compact Modeling of Trap Effects in Power GaN HEMTs
Y Ma, S Li, M Liu, W Lu, M Li, S Liu… - … on Device and …, 2024 - ieeexplore.ieee.org
This article proposes an aging reliability compact model with high accuracy to simulate trap
effects after long-term aging in power Gallium Nitride (GaN) based high electron mobility …
effects after long-term aging in power Gallium Nitride (GaN) based high electron mobility …