Photoconductive Schottky diode based on Al/p-Si/SnS2/Ag for optical sensor applications
The Schottky barrier junctions of tin disulfide (SnS2) on p-silicon were fabricated using sol–
gel spin technique. The photoresponse and junction properties of the diode were …
gel spin technique. The photoresponse and junction properties of the diode were …
Optical and structural properties of CuO nanofilm: its diode application
The high crystalline CuO nanofilms have been prepared by spin coating and annealing
combined with a simple chemical method. The obtained films have been characterized by X …
combined with a simple chemical method. The obtained films have been characterized by X …
New nano-composite based on carbon dots (CDots) decorated magnesium oxide (MgO) nano-particles (CDots@ MgO) sensor for high H2S gas sensitivity …
AG El-Shamy - Sensors and Actuators B: Chemical, 2021 - Elsevier
Schottky device based on carbon dots (C Dots) decorated magnesium oxide (MgO) nano-
particles (CDots@ MgO) has been engineered for H 2 S gas sensing applications. TEM …
particles (CDots@ MgO) has been engineered for H 2 S gas sensing applications. TEM …
Solar light responsive ZnO nanoparticles adjusted using Cd and La Co-dopant photodetector
Optical sensing from the solar light range of light is very important for industrial process
monitoring and life science. Hence, we present inorganic photodetector, operating between …
monitoring and life science. Hence, we present inorganic photodetector, operating between …
Preparation and characterization of polyaniline/chitosan blend film
T Thanpitcha, A Sirivat, AM Jamieson… - Carbohydrate …, 2006 - Elsevier
Films consisting of a blend of a chitosan hydrogel and a conductive polymer, polyaniline
(PANI), were prepared and characterized for their electrical and mechanical properties …
(PANI), were prepared and characterized for their electrical and mechanical properties …
[HTML][HTML] Optoelectronic enhancement of ZnO/p-Si Schottky barrier photodiodes by (Sn, Ti) co-do**
In this study, metal–semiconductor–metal (MSM) ZnO-based Schottky barrier diodes (SBDs)
were fabricated on the basis of titanium-doped tin–zinc oxide (SZT) films by sol–gel spin …
were fabricated on the basis of titanium-doped tin–zinc oxide (SZT) films by sol–gel spin …
Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes
The electrical and dielectric properties of Au/PVA (Ni, Zn-doped)/n-Si Schottky diodes (SDs)
were studied in the temperature range of 80–400K. The investigation of various SDs …
were studied in the temperature range of 80–400K. The investigation of various SDs …
[BOG][B] Encyclopedia of Polymer Applications, 3 Volume Set
M Mishra - 2018 - taylorfrancis.com
Undoubtedly the applications of polymers are rapidly evolving. Technology is continually
changing and quickly advancing as polymers are needed to solve a variety of day-to-day …
changing and quickly advancing as polymers are needed to solve a variety of day-to-day …
Optoelectronic properties of Co/pentacene/Si MIS heterojunction photodiode
Abstract The Co/pentacene/n-Si/Al device with the Co/n-Si/Al device was fabricated and
characterized by current-voltage measurements to understand the effect of the pentacene on …
characterized by current-voltage measurements to understand the effect of the pentacene on …
Photodiodes based on graphene oxide–silicon junctions
Schottky barrier diode based on graphene oxide (GO) with the structure of Al/GO/n-Si/Al was
fabricated. The current–voltage characteristics of the diode were investigated under dark …
fabricated. The current–voltage characteristics of the diode were investigated under dark …