Vertical GaN power devices: Device principles and fabrication technologies—Part I
Recent years have witnessed a tremendous development of vertical gallium nitride (GaN)
power devices, a new class of device technology that could be the key enabler for next …
power devices, a new class of device technology that could be the key enabler for next …
GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Demonstration of> 6.0-kV breakdown voltage in large area vertical GaN pn diodes with step-etched junction termination extensions
Vertical gallium nitride (GaN) pn diodes have garnered significant interest for use in power
electronics where high-voltage blocking and high-power efficiency are of concern. In this …
electronics where high-voltage blocking and high-power efficiency are of concern. In this …
[HTML][HTML] Ultrawide bandgap semiconductors
Ultrawide bandgap (UWBG) semiconductors, with energy bandgaps (> 4 eV), much wider
than the conventional wide bandgap (WBG) of GaN (3.4 eV) and SiC (3.2 eV), represent an …
than the conventional wide bandgap (WBG) of GaN (3.4 eV) and SiC (3.2 eV), represent an …
From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices
Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within
the semiconductor device community due to their potential to enhance device performance …
the semiconductor device community due to their potential to enhance device performance …
The Insertion of an AlN Spacer between the Barrier and the Channel Layer for a Polarization-Enhanced AlGaN-Based Solar-Blind Ultraviolet Detector
T Fang, K Jiang, B Wang, S Zhang, Z ** concentrations, and planar hybrid edge …
On the scope of GaN-based avalanche photodiodes for various ultraviolet-based applications
We present a review of GaN avalanche photodiodes. GaN-based avalanche photodiodes
are of emerging interest to the device community. The review covers various important …
are of emerging interest to the device community. The review covers various important …
On the practical limitations for the generation of Gunn oscillations in highly doped GaN diodes
Planar Gunn diodes based on doped GaN active layers with different geometries have been
fabricated and characterized. Gunn oscillations have not been observed due to the …
fabricated and characterized. Gunn oscillations have not been observed due to the …
Obtaining impact ionization-induced hole current by electrical measurements in gallium nitride metal–insulator–semiconductor high electron mobility transistors
YH Yeh, TC Chang, WC Huang… - Journal of Physics D …, 2021 - iopscience.iop.org
In this paper, an extraction method for measuring impact ionization-induced hole current in
gallium nitride (GaN) metal–insulator–semiconductor high electron mobility transistors (MIS …
gallium nitride (GaN) metal–insulator–semiconductor high electron mobility transistors (MIS …