Bilayer gate dielectric of ZrO2 and Ho2O3 on 4H–SiC substrate: structural and electrical characterization
This study focuses on the performance evaluation of the structural and electrical
characterization with various gas concentrations of bilayer oxide gate dielectric ZrO 2 and …
characterization with various gas concentrations of bilayer oxide gate dielectric ZrO 2 and …
Structural properties and electrical characteristics of Ho 2 O 3 and HoTi x O y gate dielectrics for a-InGaZnO thin-film transistors
TM Pan, CH Chen, JH Liu - RSC Advances, 2014 - pubs.rsc.org
In this study, we developed high-κ Ho2O3 and HoTixOy gate dielectrics for amorphous
indium–gallium–zinc oxide (a-IGZO) thin-film transistor (TFT) applications. X-ray diffraction …
indium–gallium–zinc oxide (a-IGZO) thin-film transistor (TFT) applications. X-ray diffraction …
Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors
The post-breakdown conduction characteristics of holmium titanium oxide (HoTiO x)-based
metal–insulator–metal capacitors fabricated by the atomic layer deposition technique on Si …
metal–insulator–metal capacitors fabricated by the atomic layer deposition technique on Si …
EFFECT OF GATE ELECTRODES ON STRUCTURE AND ELECTRICAL PROPERTIES OF SPUTTERED HfO2 THIN FILMS
M Dong, H Wang, L Shen, C Ye, Q Wei - Modern Physics Letters B, 2012 - World Scientific
High dielectric hafnium oxide films were grown by magnetron sputtering and post heat
treatment in nitrogen atmosphere at 500° C for 30 min using vacuum annealing furnace. The …
treatment in nitrogen atmosphere at 500° C for 30 min using vacuum annealing furnace. The …