Monolithic three-dimensional integration with 2D material-based p-type transistors

T Zou, Y Reo, S Heo, H Jung, S Kim, A Liu… - Materials Science and …, 2025 - Elsevier
Monolithic three-dimensional (M3D) integration offers a promising solution to the limitations
of silicon (Si) integrated circuits as they reach their physical limits, including problems with …

Recent progress on elemental tellurium and its devices

J Liao, Z Lai, Y Meng, JC Ho - Journal of Semiconductors, 2025 - iopscience.iop.org
The rapid advancement of information technology has heightened interest in complementary
devices and circuits. Conventional p-type semiconductors often lack sufficient electrical …

Molecular Reconfiguration of Disordered Tellurium Oxide Transistors with Biomimetic Spectral Selectivity

Y Zhang, J Wang, P ** Regulation
X Gao, Z Lin, J Zhang, Y Hao… - IEEE Journal of the …, 2025 - ieeexplore.ieee.org
Semiconducting single-walled carbon nanotubes (SWCNTs) have stimulated tremendous
research interest in high performance electronics thanks to their impressive mechanical and …

High Performance Hydrogen Sensors Based on Tellurium Nanobelt Field-Effect Transistors

Y Guo, J Zhang, Z Yuan, H Tai - 2024 IEEE SENSORS, 2024 - ieeexplore.ieee.org
Tellurium (Te), a p-type semiconductor with high carrier mobility, is particularly
advantageous for field-effect transistor (FET) applications. In this study, a high-performance …