The first successful pseudomorphic Ge x Si 1-x strained layers on Si were grown in Germany
in 1975. The extensive work that has been done on the production, properties and …

Superlattices and Other Heterostructures deals with optical properties of superlattices and
quantum-well structures with emphasis on phenomena governed by crystal symmetries …

Site Symmetry in Crystals is the first comprehensive account of the group-theoretical aspects
of the site (local) symmetry approach to the study of crystalline solids. The efficiency of this …

A tight-binding model in the three-center representation, with an orthogonal sp 3 set of
orbitals and interactions up to third neighbor, is introduced. This model gives a good …

Abstract Ultrathin Si m Ge n (m monolayers (ML) Si, n ML Ge) strained layer superlattices
(SLS) have been grown by molecular beam epitaxy. The optical properties of these …

The vibrational properties of Si-Ge systems are studied theoretically with ab initio
techniques. Full dispersion relations for pure silicon and germanium crystals under several …

We present relativistic (including spin) linear muffin-tin orbitals (LMTO) calculations of the
band structures of Si, Ge, and zinc-blende-like GeSi. The errors in excitation energies …

Germanium and silicon elemental semiconductors are indirect bandgap, cubic materials that
are used in the manufacture of the great majority of semiconductor electronic devices …

The formation of a superlattice increases considerably the number of phonons accessible to
optical (Raman, ir) spectroscopy. Raman spectroscopy is particularly powerful for the …

The lattice dynamics of zinc-blende GaN and AlN were studied theoretically using a two-
parameter Keating potential together with the long-range Coulomb interactions. Phonon …