Memory using mixed valence conductive oxides
D Rinerson, C Chevallier, W Kinney… - US Patent App. 11 …, 2006 - Google Patents
A memory using a mixed valence conductive oxides. The memory includes a mixed valence
conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic …
conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic …
PCRAM memory cell and method of making same
ST Harshfield, DQ Wright - US Patent 7,102,150, 2006 - Google Patents
An inverted PCRAM cell is formed by plating the bottom electrode, made of copper for
example, with a conductive material. Such as silver. Chalcogenide material is disposed over …
example, with a conductive material. Such as silver. Chalcogenide material is disposed over …
Front to back resistive random access memory cells
J Greene, FW Hawley, J McCollum - US Patent 8,415,650, 2013 - Google Patents
A resistive random access memory cell is formed on a semiconductor substrate. First and
second diffused regions are disposed in the semiconductor substrate. A polysilicon gate is …
second diffused regions are disposed in the semiconductor substrate. A polysilicon gate is …
Complementary bit PCRAM sense amplifier and method of operation
G Hush, J Baker - US Patent 6,791,859, 2004 - Google Patents
(57) ABSTRACT A method and apparatus is disclosed for Sensing the resis tance State of a
Programmable Conductor Random Access Memory (PCRAM) element using …
Programmable Conductor Random Access Memory (PCRAM) element using …
Programmable conductor memory cell structure
TL Gilton - US Patent 6,864,500, 2005 - Google Patents
In programmable conductor memory cells, metal ions precipitate out of a glass electrolyte
element in response to an applied electric field in one direction only, causing a conductive …
element in response to an applied electric field in one direction only, causing a conductive …
Method of forming chalcogenide comprising devices
KA Campbell, TL Gilton, JT Moore, J Li - US Patent 6,955,940, 2005 - Google Patents
A method of forming a non-volatile resistance variable device includes forming a first
conductive electrode material on a substrate. A metal doped chalcogenide comprising …
conductive electrode material on a substrate. A metal doped chalcogenide comprising …
Method of forming a chalcogenide comprising device
JT Moore, TL Gilton - US Patent 6,709,887, 2004 - Google Patents
A method of metal do** a chalcogenide material includes forming a metal over a
substrate. A chalcogenide material is formed on the metal. Irradiating is conducted through …
substrate. A chalcogenide material is formed on the metal. Irradiating is conducted through …
Chalcogenide comprising device
JT Moore, TL Gilton - US Patent 6,710,423, 2004 - Google Patents
Hajto, J.; Rose, MJ; Osborne, IS; Snell, AJ; Le Comber, PG, Owen, AE, Quantization effects
in metal/a-Si: H/metal devices, Int. J. Electronics 73 (1992) 911–913. Hajto, J.; Hu, J.; Snell …
in metal/a-Si: H/metal devices, Int. J. Electronics 73 (1992) 911–913. Hajto, J.; Hu, J.; Snell …
Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry
JT Moore - US Patent 6,951,805, 2005 - Google Patents
A method of forming memory circuitry sequentially includes forming a plurality of metal
interconnect lines over a semiconductive substrate. A plurality of memory cell storage …
interconnect lines over a semiconductive substrate. A plurality of memory cell storage …
Programmable conductor memory cell structure and method therefor
TL Gilton - US Patent 7,132,675, 2006 - Google Patents
In programmable conductor memory cells, metal ions precipitate out of a glass electrolyte
element in response to an applied electric field in one direction only, causing a conductive …
element in response to an applied electric field in one direction only, causing a conductive …