Impact of body thickness and scattering on III–V triple heterojunction TFET modeled with atomistic mode-space approximation
The triple heterojunction tunnel field-effect transistor (TFET) has been originally proposed to
resolve the TFET's low ON-current challenge. The carrier transport in such devices is …
resolve the TFET's low ON-current challenge. The carrier transport in such devices is …
A multiscale modeling of triple-heterojunction tunneling FETs
A high performance triple-heterojunction (3HJ) design has been previously proposed for
tunneling FETs (TFETs). Compared with single HJ TFETs, the 3HJ TFETs have both shorter …
tunneling FETs (TFETs). Compared with single HJ TFETs, the 3HJ TFETs have both shorter …
Controlling facets and defects of InP nanostructures in confined epitaxial lateral overgrowth
The selective area growth technique, confined epitaxial lateral overgrowth (CELO), enables
the growth of lateral III-V heterojunctions integrated on mismatched substrates. In CELO …
the growth of lateral III-V heterojunctions integrated on mismatched substrates. In CELO …
An analytical modeling and simulation of surrounding gate TFET with an impact of dual material gate and stacked oxide for low power applications
V Dharshan, NB Balamurugan… - Journal of Nano …, 2019 - Trans Tech Publ
In this paper, an analytical model for modified Surrounding Gate Tunnel FET with gate stack
engineering and different gate metals has been developed. Further, considering the scaling …
engineering and different gate metals has been developed. Further, considering the scaling …
Sb-and Al-Free ultra-high-current tunnel FET designs
We propose a series of ultra-high-current triple-heterojunction (3HJ) tunnel field-effect
transistor (TFET) designs based on InGaAs/InP materials. Such materials are Sb-and Al-free …
transistor (TFET) designs based on InGaAs/InP materials. Such materials are Sb-and Al-free …
Minimization of drain-end leakage of a U-shaped gated tunnel FET for low standby power (LSTP) application
In this paper, for the first time, the transfer characteristic of a 'U'-shaped gated tunnel FET
(TFET) has been thoroughly investigated considering the real-time adverse effects of gate-to …
(TFET) has been thoroughly investigated considering the real-time adverse effects of gate-to …
Comprehensive Analysis of NC-L-TFETs
In this chapter, the performance of negative-capacitance L-shaped tunneling field-effect
transistors (NC-L-TFETs) and conventional L-TFETs is analyzed and compared by …
transistors (NC-L-TFETs) and conventional L-TFETs is analyzed and compared by …
[BOOK][B] Triple-heterojunction (3-HJ) TFETs Design and Fabrication for Low Power Logic
HY Tseng - 2021 - search.proquest.com
Power/heat density becomes excessive in VLSI. Supply voltage in the current 7/10 nm
process has been scaled to 0.7 V for logic devices to reduce dynamic power loss (P …
process has been scaled to 0.7 V for logic devices to reduce dynamic power loss (P …
Modeling nonlocality in quantum systems
JA Charles - 2018 - search.proquest.com
The widely accepted Non-equilibrium Greens functions (NEGF) method and the Self-
Consistent Born Approximation, to include scattering, is employed. Due to the large matrix …
Consistent Born Approximation, to include scattering, is employed. Due to the large matrix …
New directions of nanoelectronics research for computing
A Chen - 2018 14th IEEE International Conference on Solid …, 2018 - ieeexplore.ieee.org
Nanoelectronics research has generated a wide range of materials and devices with unique
characteristics that can be utilized in novel computing solutions, from low power switches for …
characteristics that can be utilized in novel computing solutions, from low power switches for …