Integration of GaN and diamond using epitaxial lateral overgrowth

R Ahmed, A Siddique, J Anderson… - … applied materials & …, 2020 - ACS Publications
Growth of single-crystalline GaN on polycrystalline diamond is reported for the first time. The
structure was achieved using a combined process including selective diamond growth on …

High electron mobility semiconductor device and method therefor

B Padmanabhan, JM Parsey Jr, A Salih… - US Patent …, 2015 - Google Patents
BACKGROUND The present invention relates, in general, to electronics, and more
particularly, to semiconductors, structures thereof, and methods of forming semiconductor …

High electron mobility semiconductor device and method therefor

B Padmanabhan, JM Parsey Jr, A Salih… - US Patent …, 2016 - Google Patents
BACKGROUND The present invention relates, in general, to electronics, and more
particularly, to semiconductors, structures thereof, and methods of forming semiconductor …

Method of fabricating diamond-semiconductor composite substrates

D Francis - US Patent 10,043,700, 2018 - Google Patents
A method of fabricating a semiconductor-on-diamond composite substrate, the method
comprising:(i) starting with a native semiconductor wafer comprising a native silicon carbide …

Microwave transmitter with improved information throughput

F Ejeckam, TD Mitchell Jr, P Saunier - US Patent 10,374,553, 2019 - Google Patents
An RF amplifier module comprises a package having a package base, at least one RF
amplifier chip attached to the package base, and an RF power combiner chip attached to the …

Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substrates using intermediate nucleating layer

D Francis, F Ejeckam, J Wasserbauer… - US Patent 8,945,966, 2015 - Google Patents
Methods for integrating wide-gap semiconductors with synthetic diamond substrates are
disclosed. Diamond substrates are created by depositing synthetic diamond onto a …

Satellite communication transmitter with improved thermal management

F Ejeckam, TD Mitchell Jr, P Saunier - US Patent 10,332,820, 2019 - Google Patents
A high efficiency satellite transmitter comprises an RF amplifier chip in thermal contact with a
radiant cooling element via a heat conducting element. The RF amplifier chip comprises an …

Microwave transmitter with improved information throughput

F Ejeckam, TD Mitchell, P Saunier - US Patent 10,804,853, 2020 - Google Patents
An RF amplifier module comprises a package having a package base, at least one RF
amplifier chip attached to the package base, and an RF power combiner chip attached to the …

Satellite communication transmitter with improved thermal management

F Ejeckam, TD Mitchell, P Saunier - US Patent 10,811,335, 2020 - Google Patents
A high efficiency satellite transmitter comprises an RF amplifier chip in thermal contact with a
radiant cooling element via a heat conducting element. The RF amplifier chip comprises an …

Method for manufacturing nitride semiconductor device and nitride semiconductor device

H Otake, K Chikamatsu - US Patent App. 17/787,945, 2023 - Google Patents
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or
switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier …