Carrier trap** and luminescence polarization in quantum dashes
We study experimentally and theoretically polarization-dependent luminescence from an
ensemble of quantum-dot-like nanostructures with a very large in-plane shape anisotropy …
ensemble of quantum-dot-like nanostructures with a very large in-plane shape anisotropy …
Phonon-assisted radiative recombination of excitons confined in strongly anisotropic nanostructures
The influence of acoustic phonons on the emission spectra of quantum dashes (QDashes),
that are quasi-zero-dimensional epitaxial nanostructures with significant shape anisotropy …
that are quasi-zero-dimensional epitaxial nanostructures with significant shape anisotropy …
Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam …
The optical and structural properties of a new kind of InAs/InGaAlAs/InP quantum dot (QD)-
like objects grown by molecular beam epitaxy have been investigated. These …
like objects grown by molecular beam epitaxy have been investigated. These …
Toward weak confinement regime in epitaxial nanostructures: Interdependence of spatial character of quantum confinement and wave function extension in large and …
In this paper we present a comprehensive and detailed analysis of carrier/exciton wave
function extension in large low-strain In 0.3 Ga 0.7 As quantum dots (QDs). They exhibit …
function extension in large low-strain In 0.3 Ga 0.7 As quantum dots (QDs). They exhibit …
Height-driven linear polarization of the surface emission from quantum dashes
The influence of the nanostructure height on the polarization of the surface emission was
systematically investigated for In (Ga) As/InP quantum dashes. Polarization-resolved …
systematically investigated for In (Ga) As/InP quantum dashes. Polarization-resolved …
Confinement regime in self-assembled InAs/InAlGaAs/InP quantum dashes determined from exciton and biexciton recombination kinetics
The exciton and biexciton confinement regimes in strongly anisotropic epitaxial InAs
nanostructures called quantum dashes (QDashes) embedded in an In 0.53 Ga 0.23 Al 0.24 …
nanostructures called quantum dashes (QDashes) embedded in an In 0.53 Ga 0.23 Al 0.24 …
Exciton spin relaxation in InAs/InGaAlAs/InP (001) quantum dashes emitting near 1.55 μm
Exciton spin and related optical polarization in self-assembled InAs/In 0.53 Ga 0.23 Al 0.24
As/InP (001) quantum dashes emitting at 1.55 μm are investigated by means of polarization …
As/InP (001) quantum dashes emitting at 1.55 μm are investigated by means of polarization …
Electronic and optical properties of non-uniformly shaped InAs/InP quantum dashes
P Kaczmarkiewicz… - … Science and Technology, 2012 - iopscience.iop.org
We theoretically study the optical properties and the electronic structure of highly elongated
InAs/InP quantum dots (quantum dashes) and show how carrier trap** due to geometrical …
InAs/InP quantum dots (quantum dashes) and show how carrier trap** due to geometrical …
Double quantum dot in a quantum dash: Optical properties
P Kaczmarkiewicz, P Machnikowski… - Journal of Applied Physics, 2013 - pubs.aip.org
We study the optical properties of highly elongated, highly flattened quantum dot structures,
also referred to as quantum dashes, characterized by the presence of two trap** centers …
also referred to as quantum dashes, characterized by the presence of two trap** centers …
[PDF][PDF] The phonon-assisted radiative recombination of excitons confined in strongly anisotropic nanostructures
The influence of acoustic phonons on the emission spectra of quantum dashes (QDashes),
that are quasi-zero-dimensional epitaxial nanostructures with significant shape anisotropy …
that are quasi-zero-dimensional epitaxial nanostructures with significant shape anisotropy …