Comprehensive review and state of development of double-sided cooled package technology for automotive power modules

M Liu, A Coppola, M Alvi… - IEEE Open Journal of …, 2022 - ieeexplore.ieee.org
Power modules are core components of inverters in electric vehicles and their packaging
technology has a critical impact on system performance and reliability. Conventional single …

Review of topside interconnections for wide bandgap power semiconductor packaging

L Wang, W Wang, RJE Hueting… - … on Power Electronics, 2022 - ieeexplore.ieee.org
Due to their superior material properties, wide bandgap (WBG) semiconductors enable the
application of power electronics at higher temperature operation, higher frequencies, and …

A solution to press-pack packaging of SiC MOSFETS

N Zhu, HA Mantooth, D Xu, M Chen… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
This paper proposes a packaging method for SiC MOSFETs that provides a feasible solution
of implementing press-pack packaging on SiC MOSFETs to extend the application of SiC …

[HTML][HTML] High performance silicon carbide power packaging—Past trends, present practices, and future directions

S Seal, HA Mantooth - Energies, 2017 - mdpi.com
This paper presents a vision for the future of 3D packaging and integration of silicon carbide
(SiC) power modules. Several major achievements and novel architectures in SiC modules …

A double-sided cooled split-phase SiC power module with fuzz button interposer

AI Emon, Y Wu, Y Li, AB Mirza… - IEEE Journal of …, 2023 - ieeexplore.ieee.org
Power modules are the core components of the powertrain of hybrid and battery electric
vehicle (EV) and has a significant impact on system performance and reliability …

Improvement Heat Dissipation of Flip Chip Double-Sided cooling IGBT Module Using AlSiC-Interposer Technology

G Sun, C Peng, J Wen, H Liu, W Zhu… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
As the power density of electric vehicles continues to increase, double-sided cooling
technology has emerged as a focal point of research. However, the complexity of double …

Analysis of press-pack SiC MOEFET'S parasitic resistance

R Yan, M Chen, N Zhu, D Xu - 2018 IEEE International Power …, 2018 - ieeexplore.ieee.org
To press-pack devices, higher packaging resistance results in higher conduction losses. In
this paper, compositions of the packing resistance are studied for a press-pack SiC …

Die current balancing of a press-pack SiC MOSFET

N Zhu, M Chen, R Yan, A Mantooth… - 2018 IEEE Energy …, 2018 - ieeexplore.ieee.org
The SiC MOSFET die is more sensitive to stray inductance than IGBT device. One of the key
layout point for the SiC MOSFET module is that the stray inductance for each die should be …

Point-Contact Bonding of Integrated Three-Dimensional Manifold Microchannel Cooling Within Direct Bonded Copper Platform

Y Lin, T Wei, WJ Moy, H Chen… - Journal of …, 2024 - asmedigitalcollection.asme.org
A microchannel heat sink integrated with a three-dimensional manifold using direct bonded
copper (DBC) is promising for high power density electronics due to the combination of low …

Reliability of electronic components and systems with WBG technology

F Iannuzzo, K Zhang - 2024 - vbn.aau.dk
Power electronics plays a vital role in various applications, from household devices to
electric vehicles and renewable energy systems. In Denmark, the power electronics sector is …