Controlled spalling is a fast process that can mechanically exfoliate III-V semiconductor
layers from their host wafer substrates and has the potential to produce high power-density …

We report gallium arsenide (GaAs) growth rates exceeding 300 µm h− 1 using dynamic
hydride vapor phase epitaxy. We achieved these rates by maximizing the gallium to gallium …

While photoelectrochemical (PEC) solar-to-hydrogen efficiencies have greatly improved
over the past few decades, advances in PEC durability have lagged behind. Corrosion of …

Multijunction (MJ) solar cells have attracted considerable attention as next‐generation solar
cells. III–V‐based MJ solar cells connected to heterogeneous cells, such as GaAs//Si and …

III–V semiconductors form the most efficient single-and multijunction photovoltaics. Metal–
organic vapor-phase epitaxy, which uses toxic and pyrophoric gas-phase precursors, is the …

Multijunction (MJ) solar cells achieve high efficiencies by effectively utilizing the solar
spectrum. Previously, we have developed III‐V MJ solar cells using smart stack technology …

Hydride vapor phase epitaxy (HVPE) is a III–V device fabrication technology that has
received attention owing to its low production costs. The properties of passivation layers …

Increasing epitaxial growth rate is an important path toward III-V solar cell cost reductions;
however, photovoltaic device performance has been shown to degrade with increasing …

Hydride vapor phase epitaxy (HVPE) is a low-cost alternative to conventional metal-organic
vapor phase epitaxy (MOVPE) growth of III-V solar cells. In this work, we show continued …

We demonstrate hydride vapor phase epitaxy (HVPE) of GaAs with unusually high growth
rates (RG) at low temperature and atmospheric pressure by employing a hydride-enhanced …