Design Insights into Thermal Performance of Vertically Stacked JL-NSFET with High-k Gate
Dielectric for Sub 5-nm Technology Node - IOPscience Skip to content IOP Science home …

In this work, to support the need of ultra-low power applications with" Always-ON" feature, a
review of area-scaled tunneling is carried out in different Field Effect Transistor (FET) …

Tunnel field-effect transistors (TFETs) have been explored extensively as a possible
substitute for MOSFETs, especially for digital system design applications. Unlike …

III-nitride high-electron-mobility transistors (HEMTs) are the optimal choices for high-RF and
power applications due to their exceptional performance characteristics. Nevertheless …

The examined work elucidates a novel concept on Gate All Around (GAA) hetero dielectric
gate-cylindrical tunnel field-effect transistor (TFET) to reduce SCEs. In this paper, a hetero …

This study presents and examines the feasibility of a dual metal gate ferroelectric
germanium heterojunction-based step channel double-gate tunnel field-effect transistor (SC …

Tunnel field-effect transistors (TFETs) have garnered great interest as an option for the
replacement of metal–oxide–semiconductor field-effect transistors owing to their extremely …

This paper aims to propose a novel method for designing an static random access memory
(SRAM) cell using an etched drain based Cyl GAA TFET with a hetero‐substrate material …

The current research defines a dielectrically regulated Triple Gate material do**less
Tunnel Field Effect Transistor (TG-DL-TFET) biological sensor. To detect biological …

It is remarked that the increasing power dissipation issue can be addressed by the evolution
of low power devices. The solutions that have been found in terms of negative capacitance …