Radiation damage in GaN/AlGaN and SiC electronic and photonic devices
The wide bandgap semiconductors SiC and GaN are commercialized for power electronics
and for visible to UV light-emitting diodes in the case of the GaN/InGaN/AlGaN materials …
and for visible to UV light-emitting diodes in the case of the GaN/InGaN/AlGaN materials …
Impact of terrestrial neutrons on the reliability of SiC VD-MOSFET technologies
C Martinella, RG Alía, R Stark… - … on Nuclear Science, 2021 - ieeexplore.ieee.org
Accelerated terrestrial neutron irradiations were performed on different commercial SiC
power MOSFETs with planar, trench, and double-trench architectures. The results were used …
power MOSFETs with planar, trench, and double-trench architectures. The results were used …
Radiation damage in the ultra-wide bandgap semiconductor Ga2O3
We present a review of the published experimental and simulation radiation damage results
in Ga 2 O 3. All of the polytypes of Ga 2 O 3 are expected to show similar radiation …
in Ga 2 O 3. All of the polytypes of Ga 2 O 3 are expected to show similar radiation …
Unravelling the secrets of the resistance of GaN to strongly ionising radiation
MC Sequeira, JG Mattei, H Vazquez… - Communications …, 2021 - nature.com
GaN is the most promising upgrade to the traditional Si-based radiation-hard technologies.
However, the underlying mechanisms driving its resistance are unclear, especially for …
However, the underlying mechanisms driving its resistance are unclear, especially for …
Heavy-ion microbeam studies of single-event leakage current mechanism in SiC VD-MOSFETs
C Martinella, T Ziemann, R Stark… - … on Nuclear Science, 2020 - ieeexplore.ieee.org
Heavy-ion microbeams are employed for probing the radiation-sensitive regions in
commercial silicon carbide (SiC) vertical double-diffused power (VD)-MOSFETs with …
commercial silicon carbide (SiC) vertical double-diffused power (VD)-MOSFETs with …
Is SiC a predominant technology for future high power electronics?: a critical review
Due to the magnificent properties of Silicon Carbide (SiC), such as high saturation drift
velocity, large operating temperature, higher cut-off and maximum frequency (fT and fmax) …
velocity, large operating temperature, higher cut-off and maximum frequency (fT and fmax) …
Opportunities in single event effects in radiation-exposed SiC and GaN power electronics
Radiation effects have a critical impact on the reliability of SiC and GaN power electronics
and must be understood for space and avionics applications involving exposure to various …
and must be understood for space and avionics applications involving exposure to various …
Impact of heavy-ion range on single-event effects in silicon carbide power junction barrier Schottky diodes
Experimental heavy-ion responses of silicon carbide (SiC) junction barrier Schottky (JBS)
diodes are presented. Measured data indicate that heavy ions having range less than the …
diodes are presented. Measured data indicate that heavy ions having range less than the …
Impacts of defects on the mechanical and thermal properties of SiC and GeC monolayers
Defect engineering has been considered as an effective way for controlling the heat
transport properties of two-dimensional materials. In this work, the effects of point vacancies …
transport properties of two-dimensional materials. In this work, the effects of point vacancies …
A Genetic Algorithm Trained Machine-Learned Interatomic Potential for the Silicon–Carbon System
A linear regression-based machine learned interatomic potential (MLIP) was developed for
the silicon–carbon system. The MLIP was predominantly trained on structures discovered …
the silicon–carbon system. The MLIP was predominantly trained on structures discovered …