A review of megahertz current sensors for megahertz power converters
Z **n, H Li, Q Liu, PC Loh - IEEE Transactions on Power …, 2021 - ieeexplore.ieee.org
Within a power converter, multiple currents are usually measured for control, protection,
and/or monitoring. They are therefore important sources of information, which must …
and/or monitoring. They are therefore important sources of information, which must …
A review of traditional helical to recent miniaturized printed circuit board Rogowski coils for power-electronic applications
Latest wide-bandgap power devices are switching progressively faster compared with
existing silicon devices. Their accurate current measurements for either control or protection …
existing silicon devices. Their accurate current measurements for either control or protection …
Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter
Simultaneously imposed challenges of high-voltage insulation, high dv/dt, high-switching
frequency, fast protection, and thermal management associated with the adoption of 10 kV …
frequency, fast protection, and thermal management associated with the adoption of 10 kV …
Adaptive multi-level active gate drivers for SiC power devices
State-of-the-art silicon carbide (SiC) power devices provide superior performance over
silicon devices with much higher switching frequencies/speed and lower losses. High …
silicon devices with much higher switching frequencies/speed and lower losses. High …
Comparison and discussion on shortcircuit protections for silicon-carbide MOSFET modules: Desaturation versus Rogowski switch-current sensor
Survivability of silicon-carbide (SiC) mosfet modules during short circuit (SC) is essential for
modern power electronics systems due to large economic implications. SiC mosfet modules …
modern power electronics systems due to large economic implications. SiC mosfet modules …
A gate drive with power over fiber-based isolated power supply and comprehensive protection functions for 15-kV SiC MOSFET
This paper presents a 15kV silicon carbide (SiC) MOSFET gate drive, which features high
common-mode (CM) noise immunity, small size, light weight, and robust yet flexible …
common-mode (CM) noise immunity, small size, light weight, and robust yet flexible …
High-scalability enhanced gate drivers for SiC MOSFET modules with transient immunity beyond 100 V/ns
Silicon-carbide (SiC) transistors with growing readiness for the power converter market have
raised an emerging need for high-performance gate driver (GD) units to maximize their …
raised an emerging need for high-performance gate driver (GD) units to maximize their …
Electrical performance advancement in SiC power module package design with kelvin drain connection and low parasitic inductance
Silicon carbide (SiC) power modules are promising for high-power applications because of
the high breakdown voltage, high operation temperature, low ON-resistance, and fast …
the high breakdown voltage, high operation temperature, low ON-resistance, and fast …
Power cell design and assessment methodology based on a high-current 10-kV SiC MOSFET half-bridge module
While 10-kV silicon-carbide (SiC) MOSFETs are gradually penetrating medium-voltage (MV)
applications, intertwined challenges concerning high-voltage insulation, high dv/dt …
applications, intertwined challenges concerning high-voltage insulation, high dv/dt …
Integrated switch current sensor for shortcircuit protection and current control of 1.7-kV SiC MOSFET modules
This paper presents design and implementations of a switch current sensor based on
Rogowski coils. The current sensor is designed to address the issue of using desaturation …
Rogowski coils. The current sensor is designed to address the issue of using desaturation …