A review of germanium-antimony-telluride phase change materials for non-volatile memories and optical modulators
Chalcogenide phase change materials based on germanium-antimony-tellurides (GST-
PCMs) have shown outstanding properties in non-volatile memory (NVM) technologies due …
PCMs) have shown outstanding properties in non-volatile memory (NVM) technologies due …
Recent advances in doped Ge 2 Sb 2 Te 5 thin film based phase change memories
Nowadays, chalcogenide-based phase change materials (PCMs) are proving themselves
superior in the category of memory devices due to a combination of their unique set of …
superior in the category of memory devices due to a combination of their unique set of …
Set/Reset Bilaterally Controllable Resistance Switching Ga‐doped Ge2Sb2Te5 Long‐Term Electronic Synapses for Neuromorphic Computing
Long‐term plasticity of bio‐synapses modulates the stable synaptic transmission that is quite
related to the encoding of information and its emulation using electronic hardware is one of …
related to the encoding of information and its emulation using electronic hardware is one of …
Low power reconfigurable multilevel nanophotonic devices based on Sn-doped Ge2Sb2Te5 thin films
In the past years, Ge 2 Sb 2 Te 5 has been considered a promising functional material for a
variety of reconfigurable multilevel devices, including photonic integrated circuits for the post …
variety of reconfigurable multilevel devices, including photonic integrated circuits for the post …
Time-resolved reversible optical switching of the ultralow-loss phase change material Sb2Se3
The antimony-based chalcogenide Sb 2 Se 3 is a rapidly emerging material for photonic
phase change applications owing to its ultra-low optical losses at telecommunication …
phase change applications owing to its ultra-low optical losses at telecommunication …
[HTML][HTML] Improving the performance of Ge2Sb2Te5 materials via nickel do**: Towards RF-compatible phase-change devices
High-speed electrical switching of Ge 2 Sb 2 Te 5 (GST) remains a challenging task due to
the large impedance mismatch between the low-conductivity amorphous state and the high …
the large impedance mismatch between the low-conductivity amorphous state and the high …
Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge2Sb2Te5
Y Zheng, Y Wang, T ** and programmed pulses
Hardware electronic synapse and neuro-inspired computing system based on phase
change random access memory (PCRAM) have attracted an extensive investigation …
change random access memory (PCRAM) have attracted an extensive investigation …