A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm PSAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS

J Yu, J Chen, P Zhou, H Li, Z Wang, Z Li… - IEEE Journal of Solid …, 2022 - ieeexplore.ieee.org
This article presents a broadband sub-terahertz (THz) power amplifier (PA) with a low-loss
four-way power combiner. The proposed power combiner consists of an improved zero …

A D-Band Power Amplifier in 65-nm CMOS by Adopting Simultaneous Output Power-and Gain-Matched Gmax-Core

DW Park, DR Utomo, B Yun, HU Mahmood… - IEEE Access, 2021 - ieeexplore.ieee.org
This paper proposes a simultaneous output power-and gain-matching technique in a sub-
THz power amplifier (PA) design based on a maximum achievable gain (G max) core. The …

-Band Power Amplifiers in 65-nm CMOS by Adopting Output Power Maximized -Core and Transmission Line-Based Zero-Degree Power Combining Networks

B Yun, DW Park, SG Lee - IEEE Journal of Solid-State Circuits, 2023 - ieeexplore.ieee.org
This article proposes high-gain, high-output-power, and high-power-added efficiency (PAE)
power amplifiers (PAs) by adopting an output power maximized (OPM) maximum achievable …

A D-band differential amplifier with cross-couple of series-connected capacitor and transmission line-based dual-frequency Gmax-core

HR Jeon, DW Park, SG Lee - IEEE Transactions on Circuits and …, 2024 - ieeexplore.ieee.org
This paper presents a novel wideband and high-gain amplifier that utilizes a differential dual-
frequency Gmax-core with a cross-coupled network incorporating a capacitor and a …

A 201- and 283-GHz Dual-Band Amplifier in 65-Nm CMOS Adopting Dual-Frequency -Core With Dual-Band Matching

DW Park, B Yun, DR Utomo, JP Hong… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
This work reports a concurrent dual-band amplifier with an extensive spacing between the
two bands by adopting a proposed dual-frequency maximum achievable gain () core with …

A novel gain‐boosting structure with Z‐embedding and parallel pre‐embedding network for amplifiers at near‐fmax frequencies

F He, Q **e, Z Wang - International Journal of Circuit Theory …, 2023 - Wiley Online Library
In this paper, a novel gain‐boosting structure with Z‐embedding and parallel pre‐
embedding network (Z/pre‐Y‐embedding) is proposed to improve the power gain of …

Analysis and design of power-efficient h-band cmos frequency doubler employing gain boosting and harmonic enhancing techniques

BT Moon, B Yun, J Kim, SG Lee - IEEE Access, 2023 - ieeexplore.ieee.org
This article presents a power-efficient frequency doubler employing gain boosting and
harmonic-enhancing techniques. With a single transistor only, the gain boosting technique …

A Novel Over-Push Gain-Boosting Technique for Embedded Amplifier at Near-fmax Frequencies

F He, Q **e, M Ni, Z Wang - IEEE Microwave and Wireless …, 2022 - ieeexplore.ieee.org
In this letter, a novel over-push method is proposed to improve the power gain of amplifiers
with an embedding network and a lossy matching network (MN) at near-frequency. The gain …

A 185-to-240 GHz SiGe Power Amplifier Using Non-Zero Base-Impedances for Power Gain and Output Power Optimizations

X Zhang, N Zhu, F Meng - … on Emerging and Selected Topics in …, 2024 - ieeexplore.ieee.org
It is commonly practiced in millimeter-wave and terahertz cascode amplifiers to enhance the
power gain by shorting the base-impedance in the common-base transistor. However, it is …

High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

Y Kumazaki, S Ozaki, N Okamoto, N Hara… - IEICE Transactions …, 2023 - search.ieice.org
This work shows a broadband, high-efficiency power amplifier (PA) monolithic microwave
integrated circuit (MMIC) that uses InP-based metal-oxide-semiconductor (MOS) high …