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Review on spintronics: Principles and device applications
Spintronics is one of the emerging fields for the next-generation nanoelectronic devices to
reduce their power consumption and to increase their memory and processing capabilities …
reduce their power consumption and to increase their memory and processing capabilities …
Heusler alloys for spintronic devices: review on recent development and future perspectives
Heusler alloys are theoretically predicted to become half-metals at room temperature (RT).
The advantages of using these alloys are good lattice matching with major substrates, high …
The advantages of using these alloys are good lattice matching with major substrates, high …
[HTML][HTML] Carbon-Doped Co2MnSi Heusler Alloy Microwires with Improved Thermal Characteristics of Magnetization for Multifunctional Applications
In the current work, we illustrate the effect of adding a small amount of carbon to very
common Co2MnSi Heusler alloy-based glass-coated microwires. A significant change in the …
common Co2MnSi Heusler alloy-based glass-coated microwires. A significant change in the …
Perpendicular magnetic anisotropy in Heusler alloy films and their magnetoresistive junctions
For the sustainable development of spintronic devices, a half-metallic ferromagnetic film
needs to be developed as a spin source with exhibiting 100% spin polarisation at its Fermi …
needs to be developed as a spin source with exhibiting 100% spin polarisation at its Fermi …
Perpendicular magnetic anisotropy in Co-based full heusler alloy thin films
Y Wu, XG Xu, J Miao, Y Jiang - Spin, 2015 - World Scientific
Half-metallic Co-based full Heusler alloys have been qualified as promising functional
materials in spintronic devices due to their high spin polarization. The lack of perpendicular …
materials in spintronic devices due to their high spin polarization. The lack of perpendicular …
Investigation of perpendicular magnetic anisotropy in CoFeMnSi based heterostructures
In this work, perpendicular magnetic anisotropy (PMA) is realized in MgAl 2 O 4
(MAO)/CoFeMnSi (CFMS)/MgAl 2 O 4/Ti heterostructures annealed at 300° C and 400° C …
(MAO)/CoFeMnSi (CFMS)/MgAl 2 O 4/Ti heterostructures annealed at 300° C and 400° C …
Ti underlayer effect on the ordering of CoPt in (Co/Pt) 4 multilayer thin films on Si/SiO2 substrates
Abstract L1 2-ordered CoPt 3 and L1 0-ordered CoPt are formed in electron-beam-
deposited (Co/Pt) 4 multilayer thin films with and without a Ti underlayer, respectively, on …
deposited (Co/Pt) 4 multilayer thin films with and without a Ti underlayer, respectively, on …
Enhancement of perpendicular magnetic anisotropy in NiMnSn/Co Heterostructures: Insights from PMOKE measurements
W Belkacem, R Belhi, NT Mliki - Solid State Communications, 2024 - Elsevier
We investigated the magnetic properties of the Heusler alloy NiMnSn grown on thermally
oxidized Si (100) by performing magnetic hysteresis measurements using the Polar …
oxidized Si (100) by performing magnetic hysteresis measurements using the Polar …
Formation of L10-ordered CoPt during interdiffusion of electron-beam-deposited Pt/Co bilayer thin films on Si/SiO2 substrates by rapid thermal annealing
Preparation of ordered CoPt on Si substrates is significant for expanding future applications
of spintronic devices. In this study, ordered CoPt alloys including the L1 0 phase with a …
of spintronic devices. In this study, ordered CoPt alloys including the L1 0 phase with a …
Perpendicular magnetic anisotropy in CoxPd100− x alloys for magnetic tunnel junctions
CoFeB/MgO-based perpendicular magnetic tunnel junctions (p-MTJ's) with high anisotropy
and low dam** are critical for spin-torque transfer random access memory (STT-RAM) …
and low dam** are critical for spin-torque transfer random access memory (STT-RAM) …