We present a new fabrication method for epitaxial graphene on SiC which enables the
growth of ultra-smooth defect-and bilayer-free graphene sheets with an unprecedented …

We report on electronic transport measurements in rotational square probe configuration in
combination with scanning tunneling potentiometry of epitaxial graphene monolayers which …

Generally, it is supposed that the Fermi level in epitaxial graphene is controlled by two
effects: p‐type polarization do** induced by the bulk of the hexagonal silicon carbide …

In this study, we first show that the argon flow during epitaxial graphene growth is an
important parameter to control the quality of the buffer and the graphene layer. Atomic force …

We investigate the epitaxial growth of the graphene buffer layer and the involved step
bunching behavior of the silicon carbide substrate surface using atomic force microscopy …

In this study, we first show that the argon flow during epitaxial graphene growth is an
important parameter to control the quality of the buffer and the graphene layer. Atomic force …

The electrical quantum standards have played a decisive role in modern metrology,
particularly since the introduction of the revised International System of Units (SI) in May …

(See the complete abstract within the thesis in both English and German versions) In this
thesis, the process conditions of the epitaxial graphene growth through a socalled polymer …

** Mattias Kruskopf, Arbeitsgruppe 2.53 „Niedrigdimensionale Elektronensysteme “, E-Mail:
mattias. kruskopf@ ptb. de 10–9 beträgt. Allerdings ist dafür ein erheblicher technischer …

The graphene growth of samples S1 (6H-SiC) and S2 (4H-SiC) by means of the PASG
method was performed by a special protocol which is shown in detail in Figure S1. During …