Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque
MRAM and next-generation spin–orbit torque MRAM, are emerging as key to enabling low …

The ability of spintronic devices to utilize an electric current for manipulating the
magnetization has resulted in large-scale developments, such as magnetic random access …

Current-induced spin–orbit torques are one of the most effective ways to manipulate the
magnetization in spintronic devices, and hold promise for fast switching applications in non …

Spin-orbit torques (SOT) enable efficient electrical control of the magnetic state of
ferromagnets, ferrimagnets and antiferromagnets. However, the conventional SOT has …

Exploiting spin transport increases the functionality of electronic devices and enables such
devices to overcome physical limitations related to speed and power. Utilizing the Rashba …

Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse
classes of materials and devices using electric currents, leading to novel spintronic memory …

Electrical‐current‐induced magnetization switching is a keystone concept in the
development of spintronics devices. In the last few years, this field has experienced a …

Spintronic devices such as magnetic tunnel junctions and skyrmions have attracted
considerable attention due to features such as nonvolatility, high scalability, low power, and …

Spintronic devices, such as non-volatile magnetic random access memories and logic
devices, have attracted considerable attention as potential candidates for future high …

We study the spin orbit torque (SOT) and Dzyaloshinskii-Moriya interaction (DMI) in the dual-
interfaced Co-Ni perpendicular multilayers. Through the combination of top and bottom layer …