Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Semiconductor nanowires have attracted extensive interest as one of the best-defined
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …

Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …

Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic
device roadmap to further improve future performance increases of integrated circuits is …

III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

This article reviews recent developments in nanowire‐based photovoltaics (PV) with an
emphasis on III–V semiconductors including growth mechanisms, device fabrication and …

We develop a quantitative model of the self-catalyzed vapor-liquid-solid growth of GaAs
nanowires, that depends on only a few a priori unknown physical parameters. The model is …

Continued development of high-efficiency multi-junction solar cells requires growth of lattice-
mismatched materials. Today, the need for lattice matching both restricts the bandgap …

We report complementary metal–oxide–semiconductor (CMOS)-compatible integration of
compound semiconductors on Si substrates. InAs and GaAs nanowires are selectively …

We report on the epitaxial growth of large-area position-controlled self-catalyzed GaAs
nanowires (NWs) directly on Si by molecular beam epitaxy (MBE). Nanohole patterns are …