Recent developments and prospects of fully recessed MIS gate structures for GaN on Si power transistors
For high electron mobility transistors (HEMTs) power transistors based on AlGaN/GaN
heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two …
heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two …
Selective area do** of GaN toward high-power applications
Selective area do** in GaN, especially p-type, is a critical and inevitable building block for
the realization of advanced device structures for high-power applications, including, but not …
the realization of advanced device structures for high-power applications, including, but not …
Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments
S Luo, K Fu, Q ** by supersaturation modulated growth: A path toward III-nitride superjunctions
We demonstrate a pathway employing crystal polarity controlled asymmetric impurity
incorporation in the wide bandgap nitride material system to enable 3D do** control …
incorporation in the wide bandgap nitride material system to enable 3D do** control …
Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction pn Power Diodes With Mesa Edge Termination
Breakdown capability of-Ga 2 O 3/GaN heterojunction-based vertical pn power diodes with
mesa edge termination (ET) was comprehensively investigated using TCAD simulation. With …
mesa edge termination (ET) was comprehensively investigated using TCAD simulation. With …
Oxygen-doped colloidal GaN quantum dots with blue emission
H Qiu, J Wu, M Li, Z Hu, S Yang, Y Li, Y Gu… - Materials Today …, 2024 - Elsevier
Gallium nitride quantum dots (GaN QDs), as a third-generation semiconductor material, are
usually synthesized through a vapor deposition method at an elevated temperature …
usually synthesized through a vapor deposition method at an elevated temperature …
Fabrication of GaN-air channels for embedded photonic structures
M Sawicka, O Gołyga, N Fiuczek, G Muzioł… - Materials Science in …, 2023 - Elsevier
Refractive index engineering is a key element in the design of optoelectronic device
structures. In this work we present a method for the fabrication of buried hollow channels …
structures. In this work we present a method for the fabrication of buried hollow channels …