Recent progress on sensitivity analysis of schottky field effect transistor based biosensors
In this review, we explored the modern development of schottky field effect transistor (SK
FET) structures and the improvement of sensitivity of nanowire sensors using dielectric …
FET) structures and the improvement of sensitivity of nanowire sensors using dielectric …
Recent study on Schottky tunnel field effect transistor for biosensing applications
In this review, we discussed highly sensitive biosensor devices which is having a more
attractive, wide scope and development in the sensing field. Biosensor devices can detect …
attractive, wide scope and development in the sensing field. Biosensor devices can detect …
Simulation-based analysis of ultra thin-body double gate ferroelectric TFET for an enhanced electric performance
The ultra thin body double gate FE layer TFET (UTB-DG-FE-TFET) is proposed and
investigated in this work. Electrical performance parameters such as surface potential ψ (x) …
investigated in this work. Electrical performance parameters such as surface potential ψ (x) …
Impact of temperature on RF characteristics and electrical noise analysis of an L‐shaped gate tunnel FET with hetero‐stacked source configuration
In this article, a pocket doped hetero‐stacked L‐shaped gate silicon‐on‐insulator (SOI)
tunnel FET (HS‐LG‐TFET) has been proposed and investigated. The band‐to‐band …
tunnel FET (HS‐LG‐TFET) has been proposed and investigated. The band‐to‐band …
Analog/RF Performance Projection of Ultra-Steep Si Doped HfO2 Based Negative Capacitance Electrostatically Doped TFET: A Process Variation Resistant Design
The incorporation of Si doped Hf O 2 in negative capacitance electrostatically doped TFET
realizes ultra-steep and process variation resistant structure. Here, Si: Hf O 2 is the gate …
realizes ultra-steep and process variation resistant structure. Here, Si: Hf O 2 is the gate …
Temperature sensitivity analysis of SGO metal strip JL TFET
Temperature sensitivity is one of the major concern in conventional stacked gate‐oxide
junctionless tunnel‐field‐effect transistor (SGO‐JL‐TFET). In this regard, the authors have …
junctionless tunnel‐field‐effect transistor (SGO‐JL‐TFET). In this regard, the authors have …
Analog performance and linearity analysis of a p-type group IV-IV SiGe TFET
This work investigates a dual-material gate p-channel tunnel field-effect transistor (p-DMG-
TFET) with a Si/SiGe heterojunction for achieving better performance in radio frequency (RF) …
TFET) with a Si/SiGe heterojunction for achieving better performance in radio frequency (RF) …
Design, simulation and analog/RF performance evaluation of a hetero-stacked source dual metal T-shaped gate tunnel-FET in thermally variable environments
M Kumar, G Bhaskar, A Chotalia, C Rani… - Microsystem …, 2024 - Springer
In this work, a new Hetero-Stacked Source Dual Metal T-shaped Gate Silicon-on-Insulator
(SOI) TFET (HS-DMTG-TFET) is proposed, exhibiting significantly improved DC …
(SOI) TFET (HS-DMTG-TFET) is proposed, exhibiting significantly improved DC …
Insight on Work-Function and Gate Oxide-Engineered Negative-Capacitance TFET for Enhanced Analog/RF Performance and DC Characteristics in High-Frequency …
This study presents and examines the feasibility of a dual metal gate ferroelectric
germanium heterojunction-based step channel double-gate tunnel field-effect transistor (SC …
germanium heterojunction-based step channel double-gate tunnel field-effect transistor (SC …
Electrostatically Doped Schottky barrier tunnel field effect transistor
This work reports a novel steep switching device architecture, electrosatically doped
asymmetric schottky barrier tunnel field effect transistor (ED-SB-TFET) investigated by …
asymmetric schottky barrier tunnel field effect transistor (ED-SB-TFET) investigated by …