Recent advances and challenges in indium gallium nitride (inxga1-xn) materials for solid state lighting
R Kour, S Arya, S Verma, A Singh… - ECS Journal of Solid …, 2019 - iopscience.iop.org
In recent times, the demand for electrical energy is increased to such an extent that the
scientific research has to be focused on the development of materials that fulfil the growing …
scientific research has to be focused on the development of materials that fulfil the growing …
Yellow–red emission from (Ga, In) N heterostructures
Abstract (Ga, In) N-based light emitting devices are very efficient in producing blue light and
to a lesser extent green. Extending their spectral range to longer wavelengths while …
to a lesser extent green. Extending their spectral range to longer wavelengths while …
Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells
Excitation power and temperature dependences of the photoluminescence (PL) spectra are
studied in InGaN/GaN multiple quantum wells (MQWs). The excitation power dependences …
studied in InGaN/GaN multiple quantum wells (MQWs). The excitation power dependences …
Advances in the LED materials and architectures for energy-saving solid-state lighting toward “lighting revolution”
In this paper, we review the recent developments (in years 2010–2011) of energy-saving
solid-state lighting. The industry of white light-emitting diodes (LEDs) has made significant …
solid-state lighting. The industry of white light-emitting diodes (LEDs) has made significant …
Structural and optical analyses for InGaN-based red micro-LED
This study presents a comprehensive analysis of the structural and optical properties of an
InGaN-based red micro-LED with a high density of V-shaped pits, offering insights for …
InGaN-based red micro-LED with a high density of V-shaped pits, offering insights for …
Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green
GE Weng, WR Zhao, SQ Chen, H Akiyama… - Nanoscale Research …, 2015 - Springer
Strong localization effect in self-assembled InGaN quantum dots (QDs) grown by
metalorganic chemical vapor deposition has been evidenced by temperature-dependent …
metalorganic chemical vapor deposition has been evidenced by temperature-dependent …
Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures
We determine the internal quantum efficiency of strain-balanced AlGaN-InGaN-GaN hetero-
structures designed for yellow-amber light emission, by using a recent model based on the …
structures designed for yellow-amber light emission, by using a recent model based on the …
Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells
The effect of carrier localization in InGaN/GaN multiple quantum wells (MQWs) light-emitting
diodes is investigated by photoluminescence (PL) and time-resolved PL (TRPL) …
diodes is investigated by photoluminescence (PL) and time-resolved PL (TRPL) …
Strain modulated luminescence in green InGaN/GaN multiple quantum wells with microwire array by piezo-phototronic effect
R Chen, Y Yin, L Wang, Y Gao, R He, J Ran, J Wang… - Optics Letters, 2022 - opg.optica.org
We have demonstrated piezo-phototronic enhanced modulation in green InGaN/GaN
multiple quantum well (MQW) light-emitting diodes (LEDs) with a microwire array (MWA) …
multiple quantum well (MQW) light-emitting diodes (LEDs) with a microwire array (MWA) …
Performance enhancement of blue light-emitting diodes with InGaN/GaN multi-quantum wells grown on Si substrates by inserting thin AlGaN interlayers
We have grown blue light-emitting diodes (LEDs) having InGaN/GaN multi-quantum wells
(MQWs) with thin Al y Ga 1− y N (0< y< 0.3) interlayers on Si (111) substrates. It was found …
(MQWs) with thin Al y Ga 1− y N (0< y< 0.3) interlayers on Si (111) substrates. It was found …