Single-mode long-wavelength (LW) vertical-cavity surface-emitting lasers (VCSELs) present
an inexpensive alternative to DFB-lasers for data communication in next-generation giga …

Photoluminescence in (GaIn)(NAs) quantum wells designed for laser emission was studied
experimentally and theoretically. The observed temperature dependences of the …

The effects of H on the interaction between Ga vacancies V Ga and N in GaAs 1− x N x dilute
alloys are studied through first-principles total-energy calculations. We find that N binds to …

The areal bit density of magnetic disk recording has made a colossal increase over the last
decades. Extrapolation leads to recording parameters not likely to be achieved without …

Metastable III–N–V semiconductors are a subgroup of a recently discovered new class of III–
V and II–VI semiconductor alloys. Band gap engineering is achieved in these alloys by …

An improved photocurrent production is demonstrated in dilute nitride GaInNAsSb solar cells
grown by molecular beam epitaxy. The photovoltaic properties were investigated by …

We present a comparative study of carrier diffusion in semiconductor heterostructures with
different dimensionality [InGaAs quantum wells (QWs), InAs quantum dots (QDs), and …

By using transmission electron microscopy on as-grown and annealed GaInNAs/GaAs
heterostructures, we demonstrate that annealing induces a correlated behavior of both In …

In this work we investigate the effect of rapid thermal annealing (RTA) on the performance of
solar cells consisting of different GaAsSbN-based structures and correlate the device results …

In this paper, we present the application of photoreflectance (PR) spectroscopy to
investigate the energy level structure of GaInNAs-based quantum wells (QWs). Series of …