The evolution of silicon cryoetching is reported in this topical review, from its very first
introduction by a Japanese team to today's advanced technologies. The main advances in …

The increasing sensitivity of porous low dielectric constant materials to process damage
constitutes a major roadblock to their implementation in back-end-of-the-line (BEOL) wiring …

Advanced Interconnects: Materials, Processing, and Reliability Page 1 ECS Journal of Solid State
Science and Technology, 4 (1) Y1-Y4 (2015) Y1 JSS Focus Issue ON Advanced Interconnects …

In this work, an addition-curable hybrid phenolic resin containing silicon and boron was
synthesized via the addition-condensation reaction between 4-hydroxyphenylboronic acid …

This paper presents an in-depth overview of the application and impact of UV/VUV light in
advanced interconnect technology. UV light application in BEOL historically was mainly …

Cryogenic etching of a-Si, SiO 2, and Si 3 N 4 materials by CHF 3/Ar inductively coupled
plasma is investigated in a range of temperature from− 140 to+ 20 C. Samples of the three …

Ensuring a consistently high-strength connection in superalloy components of space
shuttles from 25 to 1200° C is essential yet challenging. To achieve the objective, we …

Reducing the delay of backend interconnects is critical in delivering improved performance
in next generation computer chips. One option is to implement interlayer dielectric (ILD) …

We review the latest studies that address the fundamental understanding of low-k dielectric
electrical properties and reliability. We focus on the results discussing the nature of process …

Low temperature etching of organosilicate low-k dielectrics in CF 3 Br and CF 4 plasmas is
studied. The chemical composition of pristine and etched low-k films was measured by …