Among the wide band gap (WBG) semiconductors, silicon carbide (4H-SiC) and gallium
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …

Owing to the high carrier density and high electron mobility of the two dimensional electron
gas (2DEG), high electron mobility transistors (HEMTs) based on gallium nitride (GaN) are …

Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …

In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …

Silicon carbide (SiC) and gallium nitride (GaN) devices are considered as optimal solutions
to meet the requirements of the modern power electronics. In fact, they can allow an …

Wide band gap semiconductors, and in particular silicon carbide (4H‐SiC) and gallium
nitride (GaN), are very promising materials for the next generation of power electronics, to …

This work presents a tri-gate GaN junction high-electron-mobility transistor (JHEMT) concept
in which the p–n junction wraps around the AlGaN/GaN fins in the gate region. This tri-gate …

High-κ dielectrics are insulating materials with higher permittivity than silicon dioxide. These
materials have already found application in microelectronics, mainly as gate insulators or …

Nickel oxide semiconductor is a good p-type material for fabricating a pn-heterojunction with
n-type GaN semiconductor. The p-NiO/n-GaN heterojunction, which produces a type II band …

Nickel oxide (NiO) films are prepared on n-type GaN by an e-beam evaporation technique
and its structural and chemical characteristics analysed by XRD, TEM and XPS …