Wurtzite and fluorite ferroelectric materials for electronic memory

KH Kim, I Karpov, RH Olsson III, D Jariwala - Nature Nanotechnology, 2023 - nature.com
Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …

A comprehensive review on FinFET in terms of its device structure and performance matrices

MN Reddy, DK Panda - Silicon, 2022 - Springer
The revolutions made in the CMOS technology are brought up by, continuous downscaling
in order to obtain higher density, better performance and low power consumption, causing …

Ferroelectric FETs-based nonvolatile logic-in-memory circuits

X Yin, X Chen, M Niemier, XS Hu - IEEE Transactions on Very …, 2018 - ieeexplore.ieee.org
Among the beyond-complementary metal-oxide-semiconductor (CMOS) devices being
explored, ferroelectric field-effect transistors (FeFETs) are considered as one of the most …

Device-circuit analysis of ferroelectric FETs for low-power logic

S Gupta, M Steiner, A Aziz, V Narayanan… - … on Electron Devices, 2017 - ieeexplore.ieee.org
Ferroelectric FETs (FEFETs) are emerging devices with an immense potential to replace
conventional MOSFETs by virtue of their steep switching characteristics. The ferroelectric …

Insights into the operation of negative capacitance FinFET for low power logic applications

RK Jaisawal, PN Kondekar, S Yadav, P Upadhyay… - Microelectronics …, 2022 - Elsevier
In the incessant search to overcome the power densities and energy efficient limitations,
performance matrix of emerging electronic devices are being explored inevitably to find the …

Design and benchmarking of ferroelectric FET based TCAM

X Yin, M Niemier, XS Hu - Design, Automation & Test in Europe …, 2017 - ieeexplore.ieee.org
We consider how emerging transistor technologies, specifically ferroelectric field effect
transistors (or FeFETs), can realize compact and energy efficient ternary content …

Enabling energy-efficient nonvolatile computing with negative capacitance FET

X Li, J Sampson, A Khan, K Ma… - … on Electron Devices, 2017 - ieeexplore.ieee.org
Negative capacitance FETs (NCFETs) have attracted significant interest due to their steep-
switching capability at a low voltage and the associated benefits for implementing energy …

Evaluation of negative capacitance ferroelectric MOSFET for analog circuit applications

Y Li, Y Kang, X Gong - IEEE Transactions on Electron Devices, 2017 - ieeexplore.ieee.org
Negative capacitance ferroelectric (FE) field-effect transistor (FeFET) is promising to address
the issue of the increasing power density in digital circuit by realizing sub-60 mV/decade …

Analysis of DIBL effect and negative resistance performance for NCFET based on a compact SPICE model

Y Liang, X Li, SK Gupta, S Datta… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
In this paper, we describe an improved SPICE model for the negative capacitance field-
effect transistor (NCFET). According to the law of conservation of charge, the model is built …

Design and optimization of FeFET-based crossbars for binary convolution neural networks

X Chen, X Yin, M Niemier, XS Hu - 2018 Design, Automation & …, 2018 - ieeexplore.ieee.org
Binary convolution neural networks (CNNs) have attracted much attention for embedded
applications due to low hardware cost and acceptable accuracy. Nonvolatile, resistive …