Fundamental mechanisms of energy storage, corrosion, sensing, and multiple biological
functionalities are directly coupled to electrical processes and ionic dynamics at solid–liquid …

Monocrystalline silicon is highly promising for applications as semiconductor materials in
electronic devices. However, the intrinsic brittleness of Si as well as the relatively low …

Most of today's electronic devices, like solar cells and batteries, are based on nanometer-
scale built-in electric fields. Accordingly, characterization of fields at such small scales has …

The scanning capacitance microscope (SCM) is a powerful tool to characterise local
electrical properties in GaN-based high electron mobility transistor (HEMT) structures with …

Monocrystalline silicon is an important substrate or base material for manufacturing
integrated circuit chips, mirrors, etc. However, it is a typical hard and brittle material, which is …

Kelvin probe force microscopy (KPFM) opens up a new field of applications as advanced
technique to characterize cross-sectional electric field as well as distribution of surface …

It remains a challenge to characterize the do** type in nanowires (NWs). We report in this
paper a novel way to probe the do** type in GaN NWs by photoassisted kelvin probe force …

We derive an analytical model for the depletion capacitance of silicon-on-insulator (SOI)
optical modulation diodes. This model accurately describes the parasitic fringe capacitances …

Investigating and tailoring surface potential changes of a system at the interfaces is of
significance in the fundamental understanding and application of semiconductor devices …

The feasibility of local do** in silicon by an open-end coaxial applicator with a tip made of
the do** material, eg aluminum or silver, is studied in this paper. In these experiments …