Along with the development of industry and the improvement of people's living standards,
peoples' demand on resources has greatly increased, causing energy crises and …

The proliferation of industrial units across the world for a diverse range of applications has
culminated in the production of a massive number of contaminants that have a negative …

Abstract Eu-doped Gallium nitride (GaN) is a promising candidate for GaN-based red light-
emitting diodes, which are needed for future micro-display technologies. Introducing a …

The sustainable use of solar energy is critical to addressing the global energy crisis and
environmental problems caused by the overconsumption of fossil fuels. However …

The search of ways to improve light-emitting properties of silicon is of great importance for
modern optoelectronics. In this work, the photoluminescence (PL) properties of the band at …

Erbium doped silicon single- and multilayer structures for light-emitting device and laser
applications Page 1 Erbium doped silicon single- and multilayer structures for light-emitting …

Here we report on luminescent properties of multilayer Si: Er structures grown by
sublimation molecular-beam epitaxy on “silicon-on-insulator” substrates. We demonstrate …

Silicon photonics is rapidly growing and a number of Si-based active and passive
components have recently been demonstrated. We demonstrate new functionality of Er …

Excitation of erbium photoluminescence in Si: Er epitaxial structures has been studied within
a broad pump wavelength range (λex= 780–1500nm). In all the investigated structures …

Prospects for using the long-wavelength dislocation luminescence line D 1 in silicon-based
light-emitting diodes are considered. The standard spectral position of this line at 807 meV …