The unique physical, chemical, and electronic properties of rare earth oxides have been of
immense interest to replace SiO 2 as a dielectric material in metal–oxide–semiconductor …

This study presents comprehensive results on the changes of the crystal properties, surface
morphology, chemical composition and bonding structures based on X-ray photoelectron …

In this study, we investigated the effects of applied voltage and frequencies on the electrical
properties of Al/(Er 2 O 3 (150 nm)/SiO 2 (20 nm)/n-Si)/Al MOS capacitor. The e-beam …

High-k/n-Si structures were formed with HfSiO 4 films annealed at the temperature range of
RT (room temperature)-900° C and radiation-induced structural modifications were …

High-quality gate dielectric layers and high-grade interfaces between high-films and
substrates are essential to achieve favorable performance and electrical stability of metal …

Modifications in the crystal properties, chemical compositions and bond contents as a result
of irradiation of Yb 2 O 3/Si structures annealed at different temperatures in the dose range …

A detailed investigation into the effects of atomic layer deposition (ALD)-derived AlN
passivation layer on the interface chemistry, temperature stability, and leakage current …

This study presents comprehensive results on the structural modifications of Er 2 O 3/n-Si
hetero-structures under post-deposition annealing (PDA) and the effects of these changes …

The chemical bonding of zirconium silicate films were examined by FTIR. The capacitance-
voltage (CV) measurements before and after irradiation were performed at high frequency …

The aim of this study is to reduce the oxide and interface-trap charges and also improve the
stability at the oxide–semiconductor interface by growing a SiO 2 interface layer on a Si …