[BOOK][B] Thin-film transistors
CR Kagan, P Andry - 2003 - taylorfrancis.com
This is a single-source treatment of developments in TFT production from international
specialists. It interweaves overlap** areas in multiple disciplines pertinent to transistor …
specialists. It interweaves overlap** areas in multiple disciplines pertinent to transistor …
Complexation of fluorosurfactants to functionalized solid surfaces: smart behavior
SJ Hutton, JM Crowther, JPS Badyal - Chemistry of materials, 2000 - ACS Publications
Complexation of cationic fluorosurfactants to well-defined acrylic acid plasma polymer
surfaces gives rise to oleophobic/hydrophilic behavior. This is in marked contrast to the …
surfaces gives rise to oleophobic/hydrophilic behavior. This is in marked contrast to the …
Methods of deposition of hydrogenated amorphous silicon for device applications
WG Van Sark - Handbook of Thin Films, 2002 - Elsevier
Publisher Summary This chapter describes the deposition of hydrogenated amorphous
silicon (a-Si: H) and related materials by employing a low-temperature, low-density plasma …
silicon (a-Si: H) and related materials by employing a low-temperature, low-density plasma …
Possible solution to the problem of high built-up stresses in diamond-like carbon films
S Kumar, PN Dixit, D Sarangi… - Journal of applied …, 1999 - pubs.aip.org
The various issues relating to the nature of high built-up stresses in diamond like carbon
(DLC) films are presented and analyzed and the utility of pulse plasma technique in growing …
(DLC) films are presented and analyzed and the utility of pulse plasma technique in growing …
Investigation of chemical kinetics and energy transfer in a pulsed microwave H2/CH4 plasma
We present a modelling study of pulsed H 2/CH 4 microwave plasmas obtained under
moderate pressure discharge conditions in a tubular quartz reactor. The transport in the …
moderate pressure discharge conditions in a tubular quartz reactor. The transport in the …
High field-effect-mobility a-Si: H TFT based on high deposition-rate PECVD materials
CY Chen, J Kanicki - IEEE Electron Device Letters, 1996 - ieeexplore.ieee.org
The hydrogenated amorphous silicon (a-Si: H) thin-film transistors (TFT's) having a field-
effect mobility of 1.45/spl plusmn/0.05 cm/sup 2//V/spl middot/s and threshold voltage of …
effect mobility of 1.45/spl plusmn/0.05 cm/sup 2//V/spl middot/s and threshold voltage of …
Diamond-like carbon films with extremely low stress
We in this paper report different ways to realise thick diamond-like carbon (DLC) films with
stress values lower than 0.5 GPa, Thick DLC films grown by conventional rf self bias …
stress values lower than 0.5 GPa, Thick DLC films grown by conventional rf self bias …
Surface recombination of hydrogen atoms studied by a pulsed plasma excitation technique
The H atom lifetime in a low pressure hydrogen microwave plasma was measured using a
pulse induced fluorescence technique. This technique is compared to results obtained by a …
pulse induced fluorescence technique. This technique is compared to results obtained by a …
Effects of the substrate temperature on the growth and properties of hydrogenated nanostructured silicon thin films
A Hadjadj, A Beorchia, PR i Cabarrocas… - Journal of Physics D …, 2001 - iopscience.iop.org
Nanostructured silicon thin films were deposited by a pulsed plasma enhanced chemical
vapour deposition process using an argon-silane mixture. For each deposition temperature …
vapour deposition process using an argon-silane mixture. For each deposition temperature …
Deposition rate in modulated radio-frequency silane plasmas
ACW Biebericher, J Bezemer, WF Van der Weg… - Applied Physics …, 2000 - pubs.aip.org
Plasma-enhanced chemical-vapor deposition of amorphous silicon by a square-wave
amplitude-modulated radio-frequency excitation has been studied by optical emission …
amplitude-modulated radio-frequency excitation has been studied by optical emission …