2D II–VI semiconductor nanoplatelets: From material synthesis to optoelectronic integration

BT Diroll, B Guzelturk, H Po, C Dabard, N Fu… - Chemical …, 2023 - ACS Publications
The field of colloidal synthesis of semiconductors emerged 40 years ago and has reached a
certain level of maturity thanks to the use of nanocrystals as phosphors in commercial …

Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

H Morkoc, S Strite, GB Gao, ME Lin… - Journal of Applied …, 1994 - pubs.aip.org
In the past several years, research in each of the wide‐band‐gap semiconductors, SiC,
GaN, and ZnSe, has led to major advances which now make them viable for device …

[BUCH][B] Nanostructures & nanomaterials: synthesis, properties & applications

G Cao - 2004 - books.google.com
This important book focuses on the synthesis and fabrication of nanostructures and
nanomaterials, but also includes properties and applications of nanostructures and …

Wide-bandgap semiconductor materials: For their full bloom

S Fujita - Japanese journal of applied physics, 2015 - iopscience.iop.org
Wide-bandgap semiconductors are expected to be applied to solid-state lighting and power
devices, supporting a future energy-saving society. While GaN-based white LEDs have …

Heterojunction band offset engineering

A Franciosi, CG Van de Walle - Surface Science Reports, 1996 - Elsevier
Control of band discontinuities in semiconductor heterostructures may introduce a new
important degree of freedom in the design of heterojunction devices and allow independent …

[BUCH][B] Compact blue-green lasers

WP Risk, TR Gosnell, AV Nurmikko - 2003 - books.google.com
William Risk, Timothy Gosnell and Arto Nurmikko have brought together their diverse
expertise from industry and academia to write the first fully comprehensive book on the …

Misfit strain and misfit dislocations in lattice mismatched epitaxial layers and other systems

SC Jain, AH Harker, RA Cowley - Philosophical Magazine A, 1997 - Taylor & Francis
Heterostructures in the form of thin layers of one material grown on a substrate have been
the subject of intense study for several years. In the case of semiconductor systems the aim …

Fabrication and optoelectronic properties of a transparent ZnO homostructural light-emitting diode

XL Guo, JH Choi, H Tabata… - Japanese Journal of …, 2001 - iopscience.iop.org
A transparent ZnO homostructural light-emitting diode (LED) with a structure of Au
electrode/p (i)-ZnO film/n-ZnO single crystal/In electrode was fabricated using the technique …

Do** in ZnSe, ZnTe, MgSe, and MgTe wide-band-gap semiconductors

DJ Chadi - Physical review letters, 1994 - APS
The problem of do** in II-VI semiconductors is examined using an ab initio
pseudopotential approach with emphasis on ZnSe, ZnTe, MgSe, and zinc blende MgTe. The …

Molecular‐beam epitaxy of beryllium‐chalcogenide‐based thin films and quantum‐well structures

A Waag, F Fischer, HJ Lugauer, T Litz… - Journal of Applied …, 1996 - pubs.aip.org
A variety of BeMgZnSe–ZnSe‐as well as BeTe‐based quantum‐well structures has been
fabri‐cated and investigated. BeTe buffer layers improve the growth start on GaAs substrates …