2D II–VI semiconductor nanoplatelets: From material synthesis to optoelectronic integration
The field of colloidal synthesis of semiconductors emerged 40 years ago and has reached a
certain level of maturity thanks to the use of nanocrystals as phosphors in commercial …
certain level of maturity thanks to the use of nanocrystals as phosphors in commercial …
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
H Morkoc, S Strite, GB Gao, ME Lin… - Journal of Applied …, 1994 - pubs.aip.org
In the past several years, research in each of the wide‐band‐gap semiconductors, SiC,
GaN, and ZnSe, has led to major advances which now make them viable for device …
GaN, and ZnSe, has led to major advances which now make them viable for device …
[BUCH][B] Nanostructures & nanomaterials: synthesis, properties & applications
G Cao - 2004 - books.google.com
This important book focuses on the synthesis and fabrication of nanostructures and
nanomaterials, but also includes properties and applications of nanostructures and …
nanomaterials, but also includes properties and applications of nanostructures and …
Wide-bandgap semiconductor materials: For their full bloom
S Fujita - Japanese journal of applied physics, 2015 - iopscience.iop.org
Wide-bandgap semiconductors are expected to be applied to solid-state lighting and power
devices, supporting a future energy-saving society. While GaN-based white LEDs have …
devices, supporting a future energy-saving society. While GaN-based white LEDs have …
Heterojunction band offset engineering
A Franciosi, CG Van de Walle - Surface Science Reports, 1996 - Elsevier
Control of band discontinuities in semiconductor heterostructures may introduce a new
important degree of freedom in the design of heterojunction devices and allow independent …
important degree of freedom in the design of heterojunction devices and allow independent …
[BUCH][B] Compact blue-green lasers
WP Risk, TR Gosnell, AV Nurmikko - 2003 - books.google.com
William Risk, Timothy Gosnell and Arto Nurmikko have brought together their diverse
expertise from industry and academia to write the first fully comprehensive book on the …
expertise from industry and academia to write the first fully comprehensive book on the …
Misfit strain and misfit dislocations in lattice mismatched epitaxial layers and other systems
SC Jain, AH Harker, RA Cowley - Philosophical Magazine A, 1997 - Taylor & Francis
Heterostructures in the form of thin layers of one material grown on a substrate have been
the subject of intense study for several years. In the case of semiconductor systems the aim …
the subject of intense study for several years. In the case of semiconductor systems the aim …
Fabrication and optoelectronic properties of a transparent ZnO homostructural light-emitting diode
A transparent ZnO homostructural light-emitting diode (LED) with a structure of Au
electrode/p (i)-ZnO film/n-ZnO single crystal/In electrode was fabricated using the technique …
electrode/p (i)-ZnO film/n-ZnO single crystal/In electrode was fabricated using the technique …
Do** in ZnSe, ZnTe, MgSe, and MgTe wide-band-gap semiconductors
DJ Chadi - Physical review letters, 1994 - APS
The problem of do** in II-VI semiconductors is examined using an ab initio
pseudopotential approach with emphasis on ZnSe, ZnTe, MgSe, and zinc blende MgTe. The …
pseudopotential approach with emphasis on ZnSe, ZnTe, MgSe, and zinc blende MgTe. The …
Molecular‐beam epitaxy of beryllium‐chalcogenide‐based thin films and quantum‐well structures
A Waag, F Fischer, HJ Lugauer, T Litz… - Journal of Applied …, 1996 - pubs.aip.org
A variety of BeMgZnSe–ZnSe‐as well as BeTe‐based quantum‐well structures has been
fabri‐cated and investigated. BeTe buffer layers improve the growth start on GaAs substrates …
fabri‐cated and investigated. BeTe buffer layers improve the growth start on GaAs substrates …