Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …

Strained-layer quantum wells have revolutionized the performance of near-infrared diode
lasers. Two primary factors leading to the prevalence of such materials are; 1) the ability for …

Abstract Avalanche Photodiodes (APDs) are key semiconductor components that amplify
weak optical signals via the impact ionization process, but this process' stochastic nature …

The electronic structure of highly mismatched semiconductor alloys is characterized by
carrier localization and strongly influenced by the local alloy microstructure. First-principles …

Abstract Electrically pumped GaAsBi/GaAs quantum well lasers are a promising new class
of near-infrared devices where, by use of the unusual band structure properties of GaAsBi …

Bismuth-containing III-V alloys open-up a range of possibilities for practical applications in
semiconductor lasers, photovoltaics, spintronics, photodiodes, and thermoelectrics. Of …

The electronic band structure and material gain have been calculated for GaAsBi/GaAs
quantum wells (QWs) with various bismuth concentrations (Bi≤ 15%) within the 8-band and …

In this paper we discuss the epitaxial growth of Ga (AsBi) on GaAs under continuous
precursor gas supply by metal organic vapor phase epitaxy (MOVPE). Due to the required …

The potential to extend the emission wavelength of photonic devices further into the near-
and mid-infrared via pseudomorphic growth on conventional GaAs substrates is appealing …

We present a theoretical study of the gain characteristics of GaBi x As 1-x/(Al) GaAs dilute
bismide quantum well (QW) lasers. After providing a brief overview of the current state of …