Infection, inflammation, tumors, and other illnesses have for a long time posed a major
danger to human health and have developed into a global public health issue. However, the …

Abstract Gallium oxide (Ga 2 O 3), as a new kind of ultra− wide band gap semiconductor
material, is widely studied in many fields, such as power electronics, UV− blind …

As a promising ultra-wide bandgap semiconductor material, gallium oxide (Ga 2 O 3) is
attracting extensive attention of researchers due to its feasible growth process, appropriate …

Numerous optoelectronic devices based on low-dimensional nanostructures have been
developed in recent years. Among these, pyramidal low-dimensional semiconductors (zero …

The effect of H 2, NH 3, CO, CH 4, O 2 and NO 2 on the electroconductive properties of the In
2 O 3-Ga 2 O 3 mixed compounds films obtained by the halide vapor phase epitaxy was …

In this paper, an overview of wide-bandgap (WBG) semiconductors for radiation detection
applications is given. The recent advancements in the fabrication of high-quality wafers have …

Gallium oxide (β-Ga2O3) is a well-known extra-wide bandgap semiconductor and one of the
promising materials used for power photoelectric devices, gas sensors, catalytic agents, etc …

The gas-sensitive properties of Ga 2 O 3 films, first synthesized by plasma-enhanced
chemical vapor deposition (PECVD), with respect to gaseous species of environmental and …

The structural and gas-sensitive properties of nN SnO2/κ (ε)-Ga2O3: Sn heterostructures
were investigated in detail for the first time. The κ (ε)-Ga2O3: Sn and SnO2 films were grown …

Beta gallium oxide (β-Ga 2 O 3) microstructures composed of∼ 50 nm nanoparticles were
synthesized by the hydrothermal method. Using the Tauc plot method a value of∼ 4.9 eV …