Stability, reliability, and robustness of GaN power devices: A review
JP Kozak, R Zhang, M Porter, X Li, M Wang, J Zhang, R Gao, H Wang, W Yang… - Micromachines, 2023 - mdpi.com
The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors
(HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in …
(HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in …
Suppression of buffer trap** effect in GaN-on-Si active-passivation p-GaN gate HEMT via light/hole pum**
Y Wu, M Nuo, J Yang, W Lin, X Liu… - … on Electron Devices, 2023 - ieeexplore.ieee.org
This work investigates the effect of hole injection/light emission to suppress buffer-related
dynamic degradation in an E-mode GaN-on-Si active-passivation p-GaN gate high electron …
dynamic degradation in an E-mode GaN-on-Si active-passivation p-GaN gate high electron …