Self-aligned process for selectively etched p-GaN-gated AlGaN/GaN-on-Si HFETs
A process for an enhancement-mode p-GaN-gated heterostructure field-effect transistor with
self-aligned structuring of the p-GaN is proposed. A gate-first process is employed, for which …
self-aligned structuring of the p-GaN is proposed. A gate-first process is employed, for which …
Depletion-and enhancement-mode p-channel MISHFET based on GaN/AlGaN single heterostructures on sapphire substrates
C Beckmann, Z Yang, J Wieben… - IEEE Journal of the …, 2023 - ieeexplore.ieee.org
We report on p-channel metal-insulator-semiconductor heterostructure field-effect transistors
(MISHFET) based on p-GaN/uid-GaN/Al textsubscript 0.29 Ga textsubscript 0.71 N single …
(MISHFET) based on p-GaN/uid-GaN/Al textsubscript 0.29 Ga textsubscript 0.71 N single …
Threshold Voltage Control in AlGaN/GaN/AlGaN Double-Heterostructure MISHFET Utilizing 2-D Electron and Hole Gases
A Kirchbrücher, G Lükens, C Beckmann… - … on Electron Devices, 2025 - ieeexplore.ieee.org
Conventional AlGaN/GaN metal–insulator–semiconductor heterostructure field-effect
transistors (MISHFETs) are affected by trapped charges at the dielectric/AlGaN interface …
transistors (MISHFETs) are affected by trapped charges at the dielectric/AlGaN interface …
Effect of Inductively Couple Plasma‐Based Oxygen Plasma Treatment on AlGaN/GaN HEMT
Y He, C Wang, P Ma, Z Wang, M Zhang… - … status solidi (a), 2018 - Wiley Online Library
In this paper, the physical mechanism and trap effect of AlGaN/GaN high electron mobility
transistor HEMT with inductively couple plasma (ICP) based oxygen plasma treatment are …
transistor HEMT with inductively couple plasma (ICP) based oxygen plasma treatment are …
[PDF][PDF] Normally-off transistor topologies in gallium nitride technology
G Lükens - 2020 - researchgate.net
Digitalization is rapidly evolving with an ever-growing pace. Information technology is
nowadays omnipresent in our everyday life starting from the smartphones in our pockets …
nowadays omnipresent in our everyday life starting from the smartphones in our pockets …
Limitations for Reliable Operation at Elevated Temperatures of Al2O3/AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors Grown by …
L Heuken, A Ottaviani, D Fahle… - … status solidi (a), 2020 - Wiley Online Library
Herein, the gate degradation mechanisms of gallium nitride (GaN)‐based metal–insulator–
semiconductor high‐electron‐mobility transistors (MISHEMTs) utilizing Al2O3 grown by …
semiconductor high‐electron‐mobility transistors (MISHEMTs) utilizing Al2O3 grown by …