1039 kA/cm2 peak tunneling current density in GaN-based resonant tunneling diode with a peak-to-valley current ratio of 1.23 at room temperature on sapphire …
HP Zhang, JS Xue, ZP Sun, LX Li, JJ Yao, F Liu… - Applied Physics …, 2021 - pubs.aip.org
In this Letter, we present the excellent negative differential resistance (NDR) characteristics
of AlN/GaN double-barrier resonant tunneling diodes (RTDs) in which the active layers are …
of AlN/GaN double-barrier resonant tunneling diodes (RTDs) in which the active layers are …
Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes
We report the direct measurement of record fast switching speeds in GaN/AlN resonant
tunneling diodes (RTDs). The devices, grown by plasma-assisted molecular-beam epitaxy …
tunneling diodes (RTDs). The devices, grown by plasma-assisted molecular-beam epitaxy …
Planar AlN/GaN resonant tunneling diodes fabricated using nitrogen ion implantation
B Zhang, L Yang, D Wang, K Cheng, B Sheng… - Applied Physics …, 2023 - pubs.aip.org
We report planar AlN/GaN resonant tunneling diodes (RTDs) fabricated using a nitrogen ion
implantation isolation process on silicon substrates. The active area of AlN/GaN RTDs is …
implantation isolation process on silicon substrates. The active area of AlN/GaN RTDs is …
Record peak current density of over 1500 kA/cm2 in highly scaled AlN/GaN double-barrier resonant tunneling diodes on free-standing GaN substrates
F Liu, JS Xue, JJ Yao, GL Wu, ZM Li, RJ Liu… - Applied Physics …, 2024 - pubs.aip.org
This work demonstrates high-performance AlN/GaN double-barrier resonant tunneling
diodes (RTDs) with high peak current density grown by plasma-assisted molecular beam …
diodes (RTDs) with high peak current density grown by plasma-assisted molecular beam …
Bidirectional negative differential resistance in AlN/GaN resonant tunneling diodes grown on freestanding GaN
H Qiu, X Zhou, W Yang, X Zhang, S **, S Lu… - Applied Physics …, 2021 - pubs.aip.org
In this paper, we report bidirectional negative differential resistance (NDR) in Al (Ga)
N/GaN/AlN resonant tunneling diodes grown on free-standing GaN substrates by RF-plasma …
N/GaN/AlN resonant tunneling diodes grown on free-standing GaN substrates by RF-plasma …
Demonstration of highly repeatable room temperature negative differential resistance in large area AlN/GaN double-barrier resonant tunneling diodes
HP Zhang, JS Xue, YR Fu, LX Li, ZP Sun… - Journal of Applied …, 2021 - pubs.aip.org
Here, we present a systematical investigation of AlN/GaN double-barrier resonant tunneling
diodes (RTDs) grown by plasma-assisted molecular beam epitaxy on metal-organic …
diodes (RTDs) grown by plasma-assisted molecular beam epitaxy on metal-organic …
High-performance negative differential resistance characteristics in homoepitaxial AlN/GaN double-barrier resonant tunneling diodes
F Liu, JS Xue, ZM Li, GL Wu, JJ Yao… - Japanese Journal of …, 2024 - iopscience.iop.org
In this work, high-performance negative differential resistance (NDR) characteristics are
demonstrated in homoepitaxial AlN/GaN double-barrier resonant tunneling diodes (RTDs) …
demonstrated in homoepitaxial AlN/GaN double-barrier resonant tunneling diodes (RTDs) …
[HTML][HTML] Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire
AlN/GaN double-barrier resonant tunnel diodes have been grown by rf-plasma assisted
molecular beam epitaxy at temperatures between 760 and 860 C on metalorganic chemical …
molecular beam epitaxy at temperatures between 760 and 860 C on metalorganic chemical …
[PDF][PDF] Homoepitaxy of III-Nitride Semiconductors
Homoepitaxy of 3-Nitride Semiconductors Page 1 NRL/6880/MR—2022/1 DISTRIBUTION
STATEMENT A: Approved for public release; distribution is unlimited. Homoepitaxy of III-Nitride …
STATEMENT A: Approved for public release; distribution is unlimited. Homoepitaxy of III-Nitride …
Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy
XP Zhou, HB Qiu, WX Yang, SL Lu, X Zhang… - Chinese …, 2021 - iopscience.iop.org
AlN/GaN resonant tunneling diodes (RTDs) were grown separately on freestanding GaN (FS-
GaN) substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy (PA …
GaN) substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy (PA …