Wurtzite and fluorite ferroelectric materials for electronic memory

KH Kim, I Karpov, RH Olsson III, D Jariwala - Nature Nanotechnology, 2023 - nature.com
Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …

Memristive crossbar arrays for storage and computing applications

H Li, S Wang, X Zhang, W Wang… - Advanced Intelligent …, 2021 - Wiley Online Library
The emergence of memristors with potential applications in data storage and artificial
intelligence has attracted wide attentions. Memristors are assembled in crossbar arrays with …

Hybrid 2D–CMOS microchips for memristive applications

K Zhu, S Pazos, F Aguirre, Y Shen, Y Yuan, W Zheng… - Nature, 2023 - nature.com
Exploiting the excellent electronic properties of two-dimensional (2D) materials to fabricate
advanced electronic circuits is a major goal for the semiconductor industry,. However, most …

Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors

KH Kim, S Oh, MMA Fiagbenu, J Zheng… - Nature …, 2023 - nature.com
Three-dimensional monolithic integration of memory devices with logic transistors is a
frontier challenge in computer hardware. This integration is essential for augmenting …

2D materials–based homogeneous transistor-memory architecture for neuromorphic hardware

L Tong, Z Peng, R Lin, Z Li, Y Wang, X Huang, KH Xue… - Science, 2021 - science.org
In neuromorphic hardware, peripheral circuits and memories based on heterogeneous
devices are generally physically separated. Thus, exploration of homogeneous devices for …

Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks

S Chen, MR Mahmoodi, Y Shi, C Mahata, B Yuan… - Nature …, 2020 - nature.com
Two-dimensional materials could play an important role in beyond-CMOS (complementary
metal–oxide–semiconductor) electronics, and the development of memristors for information …

A review of resistive switching devices: performance improvement, characterization, and applications

T Shi, R Wang, Z Wu, Y Sun, J An, Q Liu - Small Structures, 2021 - Wiley Online Library
As human society enters the big data era, huge data storage and energy‐efficient data
processing are in great demand. The resistive switching device is an emerging device with …

Pivotal roles of MoS2 in boosting catalytic degradation of aqueous organic pollutants by Fe (II)/PMS

B Sheng, F Yang, Y Wang, Z Wang, Q Li, Y Guo… - Chemical Engineering …, 2019 - Elsevier
Despite the success of Fe (II)/peroxymonsulfate (PMS) process in detoxifying organic
pollutants, its intrinsic drawback of sluggish Fe (III) conversion to Fe (II) limits its large-scale …

Hardware implementation of neuromorphic computing using large‐scale memristor crossbar arrays

Y Li, KW Ang - Advanced Intelligent Systems, 2021 - Wiley Online Library
Brain‐inspired neuromorphic computing is a new paradigm that holds great potential to
overcome the intrinsic energy and speed issues of traditional von Neumann based …

[HTML][HTML] Unveiling the structural origin to control resistance drift in phase-change memory materials

W Zhang, E Ma - Materials Today, 2020 - Elsevier
The global demand for data storage and processing is increasing exponentially. To deal
with this challenge, massive efforts have been devoted to the development of advanced …