Electron counting in quantum dots

S Gustavsson, R Leturcq, M Studer, I Shorubalko… - Surface Science …, 2009 - Elsevier
We use time-resolved charge detection techniques to investigate single-electron tunneling
in semiconductor quantum dots. The ability to detect individual charges in real-time makes it …

A review of pure and doped ZnO nanostructure production and its optical properties using pulsed laser deposition technique

AJ Haider, AA Jabbar, GA Ali - Journal of Physics: Conference …, 2021 - iopscience.iop.org
In this review, the theoretical and experimental aspects of ZnO nanostructures production
using pulsed laser deposition techniques were presented. It reviewed the work principles of …

Counting statistics of single electron transport in a quantum dot

S Gustavsson, R Leturcq, B Simovič, R Schleser, T Ihn… - Physical review …, 2006 - APS
We have measured the full counting statistics of current fluctuations in a semiconductor
quantum dot (QD) by real-time detection of single electron tunneling with a quantum point …

Frequency-selective single-photon detection using a double quantum dot

S Gustavsson, M Studer, R Leturcq, T Ihn, K Ensslin… - Physical review …, 2007 - APS
We use a double quantum dot as a frequency-tunable on-chip microwave detector to
investigate the radiation from electron shot-noise in a near-by quantum point contact. The …

Conditional statistics of electron transport in interacting nanoscale conductors

EV Sukhorukov, AN Jordan, S Gustavsson, R Leturcq… - Nature Physics, 2007 - nature.com
There is an intimate connection between the acquisition of information and how this
information changes the remaining uncertainty in the system. This trade-off between …

Spatially resolved manipulation of single electrons in quantum dots using a scanned probe

A Pioda, S Kičin, T Ihn, M Sigrist, A Fuhrer, K Ensslin… - Physical review …, 2004 - APS
The scanning metallic tip of a scanning force microscope was coupled capacitively to
electrons confined in a lithographically defined gate-tunable quantum dot at a temperature …

Counting statistics and super-Poissonian noise in a quantum dot: Time-resolved measurements of electron transport

S Gustavsson, R Leturcq, B Simovič, R Schleser… - Physical Review B …, 2006 - APS
We present time-resolved measurements of electron transport through a quantum dot. The
measurements were performed using a nearby quantum point contact as a charge detector …

Probing the Kondo density of states in a three-terminal quantum ring

R Leturcq, L Schmid, K Ensslin, Y Meir, DC Driscoll… - Physical review …, 2005 - APS
We have measured the Kondo effect in a quantum ring connected to three terminals. In this
configuration nonlinear transport measurements allow us to check which lead contributes to …

Sub-10 nm patterning of few-layer MoS2 and MoSe2 nanolectronic devices by oxidation scanning probe lithography

YK Ryu, AI Dago, Y He, FM Espinosa… - Applied Surface …, 2021 - Elsevier
The properties of 2D materials devices are very sensitive to the physical, chemical and
structural interactions that might happen during processing. Low-invasive patterning …

Direct Patterning of p-Type-Doped Few-layer WSe2 Nanoelectronic Devices by Oxidation Scanning Probe Lithography

AI Dago, YK Ryu, FJ Palomares… - ACS applied materials & …, 2018 - ACS Publications
Direct, robust, and high-resolution patterning methods are needed to downscale the lateral
size of two-dimensional materials to observe new properties and optimize the overall …