Resistive Random Access Memories (RRAMs) are based on resistive switching (RS)
operation and exhibit a set of technological features that make them ideal candidates for …

A revision of the different numerical techniques employed to extract resistive switching (RS)
and modeling parameters is presented. The set and reset voltages, commonly used for …

A simulation study has been performed to analyze resistive switching (RS) phenomena in
valence change memories (VCM) based on a HfO 2 dielectric. The kernel of the simulation …

Multiple studies have reported the observation of electro‐synaptic response in different
metal/insulator/metal devices. However, most of them analyzed large (> 1 µm2) devices that …

Time series statistical analyses (TSSA) have been employed to evaluate the variability of
resistive switching memories and to model the set and reset voltages for modeling purposes …

Memristors based on two-dimensional (2D) materials are a rapidly growing research area
due to their potential in energy-efficient in-memory processing and neuromorphic …

Memristor is an increasingly important research field for in-memory computing (IMC) due to
its significant potential in neuromorphic computing. A resistive memristor that can integrate …

The elementary basis of intelligence in organisms with a central nervous system includes
neurons and synapses and their complex interconnections forming neural circuits. In non …

Abstract Kinetic Monte Carlo resistive random access memory simulations are used to
understand different retention experiments performed at several temperatures. The physics …

Write-variability and resistance instability are major reliability concerns impeding
implementation of oxide-based memristive devices in neuromorphic systems. The root …