In the last few years, there has been remarkable progress in the development of group III-
nitride based materials because of their potential application in fabricating various …

Progress in the design and fabrication of ultraviolet and deep-ultraviolet group III–nitride
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …

It has long been known that the local density approximation and the generalized gradient
approximation do not furnish reliable band gaps, and one needs to go beyond these …

Spin-polarized photoemission from wurtzite and zinc blende gallium nitride (GaN)
photocathodes has been observed and measured. The p-doped GaN photocathodes were …

Band gaps and electron affinities of binary and ternary, wurtzite (wz-) and zincblende (zb-) III-
nitrides are investigated using a unified hybrid density functional theory, and band offsets …

We have investigated the structural and electronic properties as well as the linear optical
response of amorphous TiO 2 within density functional theory and a numerically efficient …

We present a comprehensive overview of the optical properties of zinc-blende GaN. By a
variety of different methods, such as temperature-dependent photoluminescence …

We combine the effect of the electron-electron and electron-phonon interactions to study the
electronic and optical properties of zb-GaN. We show that only by treating the two effects at …

To assess the accuracy of hybrid functional and many-body GW methods, we study the band
offsets for a set of lattice-matched semiconductor heterojunctions, including AlAs/GaAs …

Modern quasiparticle calculations based on hybrid functionals and the GW approximation or
a transition-state approach are used to predict natural band discontinuities between wurtzite …