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Strained germanium thin film membrane on silicon substrate for optoelectronics
This work presents a novel method to introduce a sustainable biaxial tensile strain larger
than 1% in a thin Ge membrane using a stressor layer integrated on a Si substrate. Raman …
than 1% in a thin Ge membrane using a stressor layer integrated on a Si substrate. Raman …
SiN-based platform toward monolithic integration in photonics and electronics
W **ong, G Wang, J Li, C Zhao, W Wang… - Journal of Materials …, 2021 - Springer
This work presents a review of silicon nitride applications in Si photonics and electronics. As
the one of the prominent photonics platform, it owes excellent characteristics in optical …
the one of the prominent photonics platform, it owes excellent characteristics in optical …
A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission
S Huang, W Lu, C Li, W Huang, H Lai, S Chen - Optics express, 2013 - opg.optica.org
We present a method to introduce a large biaxial tensile strain in an ultra-thin germanium-on-
insulator (GOI) using selective oxidation of SiGe epilayer on silicon-on-insulator (SOI) …
insulator (GOI) using selective oxidation of SiGe epilayer on silicon-on-insulator (SOI) …
Theory of near infra-red germanium lasers
OAN Aldaghri - 2014 - etheses.whiterose.ac.uk
Due to major advances in silicon photonics technology and the importance of having a
silicon-compatible laser operating in the 1.3-1.55 micron communications wavelength …
silicon-compatible laser operating in the 1.3-1.55 micron communications wavelength …