Global energy and environmental crises are among the most pressing challenges facing
humankind. To overcome these challenges, recent years have seen an upsurge of interest …

Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …

Indium gallium nitride (InGaN)-based micro-LEDs (μLEDs) are suitable for meeting ever-
increasing demands for high-performance displays owing to their high efficiency, brightness …

Two-dimensional materials with abundant in-plane pores (porous 2D materials) have shown
high performances as catalysts, especially for photocatalysis and electrocatalysis, owing to …

Ferroelectric switching is unambiguously demonstrated for the first time in a III-V
semiconductor based material: Al 1-x Sc x N—A discovery which could help to satisfy the …

Recent decades have witnessed flourishing prosperity of III-nitride emitters in solid-state
lighting and high-resolution displays. As one of the widely used substrates, sapphire shows …

Abstract Micro-light-emitting-diodes (μLEDs) with size-independent peak external quantum
efficiency behavior was demonstrated from 10× 10 μm 2 to 100× 100 μm 2 by employing a …

Conductive inks have attracted tremendous attention owing to their adaptability and the
convenient large-scale fabrication. As a new type of conductive ink, copper-based ink is …

Chemical etching and Al 2 O 3 dielectric passivation were used to minimize nonradiative
sidewall defects in InGaN/GaN microLEDs (mesa diameter= 2–100 μm), resulting in an …

Aluminum nitride (AlN) thin films are widely investigated due to their unique physical
properties and applications in energy harvesting devices, ultrasonic transducers …