[0010] FIGS. 1A-1E show cross-sectional schematic illus trations of an example fabrication of
semiconductor device structures using a dual damascene fabrication process according to …

Methods are described for protecting cobalt (Co) metal plugs used for making electrical
connections within a semi conductor device. In one example, method includes provid ing a …

(57) ABSTRACT A semiconductor device includes a base structure including a lower level
via and a lower level dielectric layer, a conductive pillar including an upper level line and an …

(57) ABSTRACT A method for manufacturing a semiconductor device includes forming a first
dielectric layer, and forming a second dielectric layer stacked on the first dielectric layer. In …

Embodiments of the present invention are directed to fab rication methods and resulting
interconnect structures hav ing a conductive thin metal layer on a top via that promotes the …

(57) ABSTRACT A method for fabricating a semiconductor device includes forming one or
more layers including at least one of a liner and a barrier along surfaces of a first interlevel …

Techniques are provided to fabricate semiconductor devices. For example, a method
includes forming a lower level interconnect line having a first hardmask layer thereon and …

(57) ABSTRACT A method of forming a semiconductor structure includes forming one or
more interconnect lines, the one or more interconnect lines including trenches of a first metal …

An interconnect structure includes an interlayer dielectric (ILD) having a cavity extending
therethrough along a first direction. A first electrically conductive strip is formed on a …

US11776906B2 - Semiconductor device - Google Patents US11776906B2 - Semiconductor
device - Google Patents Semiconductor device Download PDF Info Publication number …